Part Details for IXFH16N50P3 by Littelfuse Inc
Results Overview of IXFH16N50P3 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
IXFH16N50P3 Information
IXFH16N50P3 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFH16N50P3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0538
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Newark | Discmsft Nchhiperfet-Polar3 To-247Ad/ Tube |Littelfuse IXFH16N50P3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.4300 / $4.5900 | Buy Now |
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DISTI #
IXFH16N50P3-ND
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DigiKey | MOSFET N-CH 500V 16A TO247AD Min Qty: 1 Lead time: 26 Weeks Container: Tube |
200 In Stock |
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$3.2199 / $7.6300 | Buy Now |
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DISTI #
75577869
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RS | DiscMSFT NChHiPerFET-Polar3 TO-247AD Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
|
$4.5800 / $4.9800 | RFQ |
Part Details for IXFH16N50P3
IXFH16N50P3 CAD Models
IXFH16N50P3 Part Data Attributes
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IXFH16N50P3
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFH16N50P3
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.36 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 330 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH16N50P3
This table gives cross-reference parts and alternative options found for IXFH16N50P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH16N50P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | IXFH16N50P3 vs NDP706A |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFH16N50P3 vs IRFS620 |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | IXFH16N50P3 vs FQA17N40 |
| STD65N6F3 | STMicroelectronics | Check for Price | 65A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 | IXFH16N50P3 vs STD65N6F3 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFH16N50P3 vs FDP6035L |
| BUK465-60A | NXP Semiconductors | Check for Price | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | IXFH16N50P3 vs BUK465-60A |
| FQAF7N80 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | IXFH16N50P3 vs FQAF7N80 |
| FQB13N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IXFH16N50P3 vs FQB13N50 |
| FDP6644 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXFH16N50P3 vs FDP6644 |
| IPB05N03L | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXFH16N50P3 vs IPB05N03L |
IXFH16N50P3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXFH16N50P3 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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Yes, IXFH16N50P3 is rated for operation up to 150°C junction temperature, making it suitable for high-temperature applications. However, derating may be necessary for prolonged exposure to high temperatures.
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To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a soldering flux compatible with the component's lead finish. Avoid overheating or applying excessive force, which can damage the component.
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The maximum surge current rating for IXFH16N50P3 is 160A for 10ms, making it suitable for applications with high inrush currents.
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Yes, IXFH16N50P3 can be used in a parallel configuration to increase the overall current handling capability. However, ensure that the components are properly matched and that the PCB design takes into account the increased current and thermal requirements.