Part Details for IXFB52N90P by IXYS Corporation
Results Overview of IXFB52N90P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Electronic Manufacturing
IXFB52N90P Information
IXFB52N90P by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFB52N90P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83R9966
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Newark | N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264, Channel Type:N Channel, Drain Source Voltage Vds:900V, Continuous Drain Current Id:52A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Power Dissipation:1.25Kw Rohs Compliant: Yes |Ixys Semiconductor IXFB52N90P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$29.1400 | Buy Now |
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DISTI #
747-IXFB52N90P
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Mouser Electronics | MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS: Compliant | 0 |
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$24.9500 | Order Now |
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DISTI #
IXFB52N90P
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TTI | MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$31.1400 | Buy Now |
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DISTI #
IXFB52N90P
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TME | Transistor: N-MOSFET, Polar™, unipolar, 900V, 52A, 1250W, PLUS264™ Min Qty: 1 | 0 |
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$27.8000 / $34.9800 | RFQ |
Part Details for IXFB52N90P
IXFB52N90P CAD Models
IXFB52N90P Part Data Attributes
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IXFB52N90P
IXYS Corporation
Buy Now
Datasheet
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IXFB52N90P
IXYS Corporation
Power Field-Effect Transistor, 52A I(D), 900V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, PLUS264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXFB52N90P Frequently Asked Questions (FAQ)
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The recommended gate resistor value for the IXFB52N90P is typically in the range of 10-20 ohms, but it may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact IXYS Corporation for more information.
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To ensure proper cooling, make sure to provide a sufficient heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components.
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The maximum allowed voltage transient for the IXFB52N90P is typically 10% above the maximum rated voltage, but it's recommended to consult the application note or contact IXYS Corporation for more information. It's also important to ensure that the device is properly snubbed to prevent voltage spikes during switching.
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Yes, the IXFB52N90P can be used in a parallel configuration to increase current handling, but it's important to ensure that the devices are properly matched and that the gate drive signals are synchronized. It's also recommended to consult the application note or contact IXYS Corporation for more information on parallel operation.
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The recommended storage temperature range for the IXFB52N90P is -40°C to 125°C. It's important to store the devices in a dry, cool place, away from direct sunlight and moisture.