Part Details for IXFB30N120P by Littelfuse Inc
Results Overview of IXFB30N120P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IXFB30N120P Information
IXFB30N120P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFB30N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFB30N120P-ND
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DigiKey | MOSFET N-CH 1200V 30A PLUS264 Min Qty: 1 Lead time: 61 Weeks Container: Tube |
545 In Stock |
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$32.5324 / $43.9000 | Buy Now |
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DISTI #
75577822
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RS | DiscMosfetN-CH HiPerFET-Polar TO-264(3) Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$46.2900 / $50.3200 | RFQ |
Part Details for IXFB30N120P
IXFB30N120P CAD Models
IXFB30N120P Part Data Attributes
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IXFB30N120P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFB30N120P
Littelfuse Inc
Power Field-Effect Transistor, 30A I(D), 1200V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS264, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFB30N120P
This table gives cross-reference parts and alternative options found for IXFB30N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFB30N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFK30N110P | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 1100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | IXFB30N120P vs IXFK30N110P |
IXFB30N120P Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IXFB30N120P is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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The thermal resistance of the IXFB30N120P can be calculated using the thermal resistance junction-to-case (RθJC) and thermal resistance junction-to-ambient (RθJA) values provided in the datasheet. The formula is: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. RθJA can be calculated similarly, using the ambient temperature instead of case temperature.
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The recommended gate drive voltage for the IXFB30N120P is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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Yes, the IXFB30N120P can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the thermal management and PCB design should be carefully considered to ensure reliable operation.
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The maximum allowed dv/dt for the IXFB30N120P is 10kV/μs, as specified in the datasheet. Exceeding this value may cause the device to malfunction or fail.