Part Details for IXFB150N65X2 by IXYS Corporation
Results Overview of IXFB150N65X2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXFB150N65X2 Information
IXFB150N65X2 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFB150N65X2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFB150N65X2
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Mouser Electronics | MOSFETs MOSFET 650V/150A Ultra Junction X2 RoHS: Compliant | 6 |
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$23.4400 / $31.5500 | Buy Now |
DISTI #
87338065
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Verical | Trans MOSFET N-CH 650V 150A 3-Pin(3+Tab) PLUS 264 Min Qty: 2 Package Multiple: 1 | Americas - 18 |
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$34.7760 / $39.4800 | Buy Now |
DISTI #
IXFB150N65X2
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TTI | MOSFETs MOSFET 650V/150A Ultra Junction X2 Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$29.2800 | Buy Now |
DISTI #
IXFB150N65X2
|
TME | Transistor: N-MOSFET, X2-Class, unipolar, 650V, 150A, 1560W, 260ns Min Qty: 1 | 25 |
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$26.1600 / $32.9300 | Buy Now |
DISTI #
IXFB150N65X2
|
IBS Electronics | TRANS MOSFET N-CH 650V 150A 3-PIN(3+, TAB) PLUS 264 Min Qty: 300 Package Multiple: 1 | 0 |
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$31.0960 | Buy Now |
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New Advantage Corporation | MOSFET DIS.150A 650V N-CH PLUS264 ULTRA JUNCTION RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 37 |
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$62.2200 / $67.4100 | Buy Now |
Part Details for IXFB150N65X2
IXFB150N65X2 CAD Models
IXFB150N65X2 Part Data Attributes
IXFB150N65X2 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IXFB150N65X2 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured.
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The recommended gate resistance for the IXFB150N65X2 is between 10 ohms and 20 ohms. This value helps to minimize oscillations and ensure stable operation of the IGBT.
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Yes, the IXFB150N65X2 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched and that the gate drive circuits are synchronized to prevent uneven current sharing.
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The maximum allowable voltage transient for the IXFB150N65X2 is 650 V. Exceeding this value can damage the device. It's essential to ensure that the device is protected from voltage transients and spikes.