Part Details for IXFA7N100P by Littelfuse Inc
Results Overview of IXFA7N100P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
IXFA7N100P Information
IXFA7N100P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFA7N100P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFA7N100P-ND
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DigiKey | MOSFET N-CH 1000V 7A TO263 Min Qty: 1 Lead time: 44 Weeks Container: Tube |
387 In Stock |
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$3.2199 / $6.8400 | Buy Now |
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DISTI #
75577803
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RS | DiscMosfetN-CH HiPerFET-Polar TO-263D2 Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$4.5800 / $4.9800 | RFQ |
Part Details for IXFA7N100P
IXFA7N100P CAD Models
IXFA7N100P Part Data Attributes
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IXFA7N100P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFA7N100P
Littelfuse Inc
Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFA7N100P
This table gives cross-reference parts and alternative options found for IXFA7N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFA7N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFP7N100P | IXYS Corporation | $2.8186 | Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXFA7N100P vs IXFP7N100P |
| IXFA7N100P | IXYS Corporation | $3.8094 | Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXFA7N100P vs IXFA7N100P |
| IXFP7N100P | Littelfuse Inc | $5.0699 | Power Field-Effect Transistor, 7A I(D), 1000V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXFA7N100P vs IXFP7N100P |
IXFA7N100P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXFA7N100P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, IXFA7N100P is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure reliability in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range (up to 150°C).
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The recommended gate drive voltage for IXFA7N100P is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements and to ensure compatibility with your system's gate drive circuitry.
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Yes, you can parallel multiple IXFA7N100P devices to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive circuitry is designed to handle the increased current and minimize current imbalance between devices.