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Part Details for IXFA3N120 by Littelfuse Inc
Results Overview of IXFA3N120 by Littelfuse Inc
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IXFA3N120 Information
IXFA3N120 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFA3N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFA3N120-ND
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DigiKey | MOSFET N-CH 1200V 3A TO263 Min Qty: 1 Lead time: 60 Weeks Container: Tube | Temporarily Out of Stock |
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$4.9694 / $10.6000 | Buy Now |
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DISTI #
V79:2366_30427975
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Arrow Electronics | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2332 | Americas - 100 |
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$4.8630 / $7.2780 | Buy Now |
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DISTI #
V36:1790_07435313
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Arrow Electronics | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 60 Weeks Date Code: 2332 | Americas - 44 |
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$4.6380 / $4.9670 | Buy Now |
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DISTI #
75577781
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RS | Disc MSFT N-CH HiPerFETs-Std TO-263D2 Min Qty: 300 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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$7.0700 / $7.6900 | RFQ |
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DISTI #
87725511
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Verical | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2332 | Americas - 100 |
|
$4.8630 / $7.2780 | Buy Now |
|
DISTI #
83604165
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Verical | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2332 | Americas - 44 |
|
$5.5275 | Buy Now |
Part Details for IXFA3N120
IXFA3N120 CAD Models
IXFA3N120 Part Data Attributes
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IXFA3N120
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFA3N120
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFA3N120
This table gives cross-reference parts and alternative options found for IXFA3N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFA3N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFP3N120 | IXYS Corporation | $4.0325 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXFA3N120 vs IXFP3N120 |
| IXTP3N120 | IXYS Corporation | $4.8817 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXFA3N120 vs IXTP3N120 |
| IXTH3N120 | IXYS Corporation | $5.0616 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXFA3N120 vs IXTH3N120 |
| IXFA3N120 | IXYS Corporation | $5.0947 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXFA3N120 vs IXFA3N120 |
| IXFP3N120 | Littelfuse Inc | $5.9529 | Power Field-Effect Transistor, | IXFA3N120 vs IXFP3N120 |
| IXTP3N120 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFA3N120 vs IXTP3N120 |
IXFA3N120 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXFA3N120 is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
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Yes, IXFA3N120 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure reliability in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below 150°C.
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The maximum allowed voltage transient for IXFA3N120 is 400 V, but it's recommended to limit transients to 300 V or less to ensure reliable operation and prevent damage to the device.
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Yes, you can parallel multiple IXFA3N120 devices to increase current handling, but it's crucial to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.