Part Details for IXFA3N120 by IXYS Corporation
Results Overview of IXFA3N120 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IXFA3N120 Information
IXFA3N120 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXFA3N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
71AH4535
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Newark | Mosfet, N-Ch, 1.2Kv, 3A, To-263 Rohs Compliant: Yes |Ixys Semiconductor IXFA3N120 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$6.5400 | Buy Now |
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DISTI #
747-IXFA3N120
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Mouser Electronics | MOSFETs 3 Amps 1200V 4.5 Rds RoHS: Compliant | 0 |
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$5.2900 / $7.6000 | Order Now |
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DISTI #
87364553
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Verical | Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 8 Package Multiple: 1 | Americas - 37 |
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$9.8280 | Buy Now |
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DISTI #
IXFA3N120
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TTI | MOSFETs 3 Amps 1200V 4.5 Rds Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 300 In Stock |
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$6.6300 / $6.7600 | Buy Now |
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DISTI #
IXFA3N120
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TME | Transistor: N-MOSFET, unipolar, 1.2kV, 3A, 200W, TO263 Min Qty: 1 | 300 |
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$6.0400 / $8.1700 | Buy Now |
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Vyrian | Transistors | 299 |
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RFQ |
Part Details for IXFA3N120
IXFA3N120 CAD Models
IXFA3N120 Part Data Attributes
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IXFA3N120
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFA3N120
IXYS Corporation
Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFA3N120
This table gives cross-reference parts and alternative options found for IXFA3N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFA3N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTH3N120 | IXYS Corporation | $5.0616 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | IXFA3N120 vs IXTH3N120 |
| IXFA3N120 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFA3N120 vs IXFA3N120 |
| IXFP3N120 | Littelfuse Inc | $5.9529 | Power Field-Effect Transistor, | IXFA3N120 vs IXFP3N120 |
| IXFP3N120 | IXYS Corporation | $4.0325 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXFA3N120 vs IXFP3N120 |
| IXTP3N120 | IXYS Corporation | $4.8817 | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXFA3N120 vs IXTP3N120 |
| IXTP3N120 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, | IXFA3N120 vs IXTP3N120 |
IXFA3N120 Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IXFA3N120 is 150°C, but it's recommended to keep it below 125°C for reliable operation.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of 1°C/W or less, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IXFA3N120 is between 10V and 15V, with a maximum of 20V.
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Yes, the IXFA3N120 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for high-frequency operation.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.