Part Details for IXDP20N60BD1 by IXYS Corporation
Results Overview of IXDP20N60BD1 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IXDP20N60BD1 Information
IXDP20N60BD1 by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXDP20N60BD1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1640 |
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RFQ |
Part Details for IXDP20N60BD1
IXDP20N60BD1 CAD Models
IXDP20N60BD1 Part Data Attributes
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IXDP20N60BD1
IXYS Corporation
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Datasheet
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IXDP20N60BD1
IXYS Corporation
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 32 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 315 ns | |
| Turn-on Time-Nom (ton) | 55 ns |
Alternate Parts for IXDP20N60BD1
This table gives cross-reference parts and alternative options found for IXDP20N60BD1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXDP20N60BD1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGTP12N60A4D | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE VERSION, 3 PIN | IXDP20N60BD1 vs HGTP12N60A4D |
IXDP20N60BD1 Frequently Asked Questions (FAQ)
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The recommended gate resistor value for IXDP20N60BD1 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) and improve noise immunity, but may also increase the turn-on time.
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To ensure reliable operation of IXDP20N60BD1 in high-temperature environments, it is essential to provide adequate heat sinking and thermal management. The device should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the ambient temperature should be kept below 150°C. Additionally, the device should be operated within its specified maximum junction temperature (Tj) of 175°C.
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The maximum allowed voltage spike for IXDP20N60BD1 is typically 1.5 to 2 times the maximum rated voltage (Vdss) of 600V. However, it is recommended to limit the voltage spike to 1.2 times Vdss to ensure reliable operation and prevent damage to the device.
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Yes, IXDP20N60BD1 can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the user should ensure that the total current rating of the parallel configuration does not exceed the maximum rated current of the device.
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To protect IXDP20N60BD1 from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static package, and the user should avoid touching the device's pins or leads. Additionally, the user can consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design.