Part Details for ISL9N315AD3ST by Rochester Electronics LLC
Results Overview of ISL9N315AD3ST by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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ISL9N315AD3ST Information
ISL9N315AD3ST by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for ISL9N315AD3ST
ISL9N315AD3ST CAD Models
ISL9N315AD3ST Part Data Attributes
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ISL9N315AD3ST
Rochester Electronics LLC
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Datasheet
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ISL9N315AD3ST
Rochester Electronics LLC
30A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 2 PIN
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-252AA | |
| Package Description | TO-252AA, 2 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ISL9N315AD3ST
This table gives cross-reference parts and alternative options found for ISL9N315AD3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N315AD3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FDD8878 | Rochester Electronics LLC | Check for Price | 35A, 30V, 0.0185ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | ISL9N315AD3ST vs FDD8878 |
| FDD8878_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | ISL9N315AD3ST vs FDD8878_NL |
| ISL9N318AD3ST | Rochester Electronics LLC | Check for Price | 30A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | ISL9N315AD3ST vs ISL9N318AD3ST |
| FDD8878 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | ISL9N315AD3ST vs FDD8878 |
| ISL9N318AD3ST | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | ISL9N315AD3ST vs ISL9N318AD3ST |