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Memory / DRAMs / IS43DR16320E-25DBL
Datasheets
IS43DR16320E-25DBL by: Integrated Silicon Solution Inc

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84

Part Details for IS43DR16320E-25DBL by Integrated Silicon Solution Inc

Results Overview of IS43DR16320E-25DBL by Integrated Silicon Solution Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics

IS43DR16320E-25DBL Information

IS43DR16320E-25DBL by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for IS43DR16320E-25DBL

Part # Distributor Description Stock Price Buy
DISTI # 81Y1245
Newark Dram, 32M X 16Bit, Bga-84, Dram Type:Ddr2, Memory Configuration:32M X 16Bit, Clock Frequency Max:400Mhz, Ic Case/Package:Bga, No. Of Pins:84Pins, Supply Voltage Nom:1.8V, Ic Mounting:Surface Mount, Operating Temperature Min:0°C Rohs Compliant: Yes |Integrated Silicon Solution/issi IS43DR16320E-25DBL RoHS: Compliant Min Qty: 209 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $2.8700
  • 418 $2.7300
  • 627 $2.6800
$2.6800 / $2.8700 Buy Now
DISTI # 706-1554-ND
DigiKey IC DRAM 512MBIT PAR 84TWBGA Min Qty: 1 Lead time: 8 Weeks Container: Tray 248
In Stock
  • 1 $2.9700
  • 10 $2.7690
  • 25 $2.6884
  • 50 $2.6268
  • 209 $2.4999
  • 418 $2.4389
  • 627 $2.4035
  • 1,045 $2.3592
$2.3592 / $2.9700 Buy Now
DISTI # IS43DR16320E-25DBL
Avnet Americas DRAM Chip DDR2 SDRAM 512Mbit 32M X 16 1.8V 84-Pin TWBGA Tray - Trays (Alt: IS43DR16320E-25DBL) RoHS: Not Compliant Min Qty: 418 Package Multiple: 209 Lead time: 8 Weeks, 0 Days Container: Tray 0
  • 418 $1.8450
  • 836 $1.8150
  • 1,254 $1.7850
  • 2,090 $1.7550
  • 4,180 $1.7250
$1.7250 / $1.8450 Buy Now
DISTI # IS43DR16320E-25DBL
Avnet Americas DRAM Chip DDR2 SDRAM 512Mbit 32M X 16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS43DR16320E-25DBL) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $2.1080
  • 5,000 $2.0972
  • 10,000 $2.0865
  • 15,000 $2.0757
  • 20,000 $2.0650
$2.0650 / $2.1080 Buy Now
DISTI # 870-43DR16320E25DBL
Mouser Electronics DRAM 512M 32Mx16 400MHz DDR2 1.8V RoHS: Compliant 669
  • 1 $2.9600
  • 10 $2.7700
  • 25 $2.6500
  • 100 $2.5700
  • 209 $2.4500
  • 418 $2.4000
  • 1,045 $2.3500
$2.3500 / $2.9600 Buy Now
DISTI # IS43DR16320E-25DBL
Avnet Asia DRAM Chip DDR2 SDRAM 512Mbit 32M X 16 1.8V 84-Pin TWBGA Tray (Alt: IS43DR16320E-25DBL) RoHS: Compliant Min Qty: 2090 Package Multiple: 209 Lead time: 8 Weeks, 0 Days 0
RFQ
DISTI # IS43DR16320E-25DBL
Avnet Silica DRAM Chip DDR2 SDRAM 512Mbit 32M X 16 18V 84Pin TWBGA Tray (Alt: IS43DR16320E-25DBL) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now
DISTI # IS43DR16320E-25DBL
EBV Elektronik DRAM Chip DDR2 SDRAM 512Mbit 32M X 16 18V 84Pin TWBGA Tray (Alt: IS43DR16320E-25DBL) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 9 Weeks, 0 Days EBV - 209
Buy Now

Part Details for IS43DR16320E-25DBL

IS43DR16320E-25DBL CAD Models

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IS43DR16320E-25DBL Part Data Attributes

Parametric Data
IS43DR16320E-25DBL Integrated Silicon Solution Inc
Buy Now Datasheet
Compare Parts:
IS43DR16320E-25DBL Integrated Silicon Solution Inc DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description BGA-84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 8 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84
Length 10.5 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for IS43DR16320E-25DBL

This table gives cross-reference parts and alternative options found for IS43DR16320E-25DBL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43DR16320E-25DBL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IS43DR16320E-25DBLI Integrated Silicon Solution Inc $6.6232 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 IS43DR16320E-25DBL vs IS43DR16320E-25DBLI
IS43DR16320E-25DBI Integrated Silicon Solution Inc Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 IS43DR16320E-25DBL vs IS43DR16320E-25DBI
Part Number Manufacturer Composite Price Description Compare
IS46DR16320E-25DBLA2 Integrated Silicon Solution Inc $4.9774 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, BGA-84 IS43DR16320E-25DBL vs IS46DR16320E-25DBLA2
M14D5121632A-2.5BVAG2H Elite Semiconductor Memory Technology Inc Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84 IS43DR16320E-25DBL vs M14D5121632A-2.5BVAG2H
K4T51163QQ-BIF70 Samsung Semiconductor Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 IS43DR16320E-25DBL vs K4T51163QQ-BIF70
K4T51163QN-BIE70 Samsung Semiconductor Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 IS43DR16320E-25DBL vs K4T51163QN-BIE70
AS4C32M16D2B-25BIN Alliance Memory Inc Check for Price DDR DRAM, IS43DR16320E-25DBL vs AS4C32M16D2B-25BIN
K4T51163QN-BIF70 Samsung Semiconductor Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 IS43DR16320E-25DBL vs K4T51163QN-BIF70
AS4C32M16D2-25BCN Alliance Memory Inc Check for Price DDR DRAM, 32MX16, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 IS43DR16320E-25DBL vs AS4C32M16D2-25BCN
MEM5116D2DAB-25I Memphis Electronic AG Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, TFBGA-84 IS43DR16320E-25DBL vs MEM5116D2DAB-25I
MEM5116D2DABG-25I Memphis Electronic AG Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, TFBGA-84 IS43DR16320E-25DBL vs MEM5116D2DABG-25I
M14D5121632A-2.5BVG2H Elite Semiconductor Memory Technology Inc Check for Price DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84 IS43DR16320E-25DBL vs M14D5121632A-2.5BVG2H

IS43DR16320E-25DBL Related Parts

IS43DR16320E-25DBL Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IS43DR16320E-25DBL is 0°C to 70°C.

  • The IS43DR16320E-25DBL requires a refresh cycle every 64ms, with a minimum of 8192 refresh cycles within an 8-hour period.

  • The recommended voltage for the IS43DR16320E-25DBL is 3.3V ± 0.3V.

  • The power-up sequence should be VCC, then VTT, then CLK, and the power-down sequence should be CLK, then VTT, then VCC.

  • The maximum clock frequency supported by the IS43DR16320E-25DBL is 25MHz.

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