Part Details for IS42S16800E-7TL-TR by Integrated Silicon Solution Inc
Results Overview of IS42S16800E-7TL-TR by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IS42S16800E-7TL-TR Information
IS42S16800E-7TL-TR by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for IS42S16800E-7TL-TR
IS42S16800E-7TL-TR CAD Models
IS42S16800E-7TL-TR Part Data Attributes
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IS42S16800E-7TL-TR
Integrated Silicon Solution Inc
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Datasheet
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IS42S16800E-7TL-TR
Integrated Silicon Solution Inc
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | TSOP2 | |
| Package Description | 0.400 INCH, LEAD FREE, TSOP2-54 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Samacsys Manufacturer | Integrated Silicon Solution Inc. | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for IS42S16800E-7TL-TR
This table gives cross-reference parts and alternative options found for IS42S16800E-7TL-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16800E-7TL-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4S281632I-UL75T | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | IS42S16800E-7TL-TR vs K4S281632I-UL75T |
| W981216BH-75 | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | IS42S16800E-7TL-TR vs W981216BH-75 |
| K4S281632C-TI75 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | IS42S16800E-7TL-TR vs K4S281632C-TI75 |
| IS42S16800D-7TLI-TR | Integrated Silicon Solution Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 | IS42S16800E-7TL-TR vs IS42S16800D-7TLI-TR |
| V54C3128164VAT-7 | Mosel Vitelic Corporation | Check for Price | 8MX16 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IS42S16800E-7TL-TR vs V54C3128164VAT-7 |
| HY57V1291620TC-75 | SK Hynix Inc | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | IS42S16800E-7TL-TR vs HY57V1291620TC-75 |
| K4S281632C-TP75 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | IS42S16800E-7TL-TR vs K4S281632C-TP75 |
| HYB39S128160DT-7 | Infineon Technologies AG | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | IS42S16800E-7TL-TR vs HYB39S128160DT-7 |
| MD56V72160B-6TAZ03 | LAPIS Semiconductor Co Ltd | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54 | IS42S16800E-7TL-TR vs MD56V72160B-6TAZ03 |
| HYB39S128160DEL-7 | Infineon Technologies AG | Check for Price | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 | IS42S16800E-7TL-TR vs HYB39S128160DEL-7 |
IS42S16800E-7TL-TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IS42S16800E-7TL-TR is 0°C to 70°C, with an extended temperature range of -40°C to 85°C available for industrial-grade applications.
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To ensure signal integrity and reduce noise, it is recommended to use a low-impedance PCB design, add decoupling capacitors near the SDRAM, and use a clock signal with a rise time of less than 1ns. Additionally, consider using a signal integrity analysis tool to simulate and optimize your design.
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The recommended refresh rate for the IS42S16800E-7TL-TR is 4096 refresh cycles per 64ms, with a maximum refresh interval of 15.6us. A higher refresh rate can increase power consumption, so it's essential to balance refresh rate with power consumption requirements.
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Yes, the IS42S16800E-7TL-TR has several power-saving features, including a low-power self-refresh mode, partial array self-refresh, and a power-down mode. These features can help reduce power consumption in low-power designs.
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The IS42S16800E-7TL-TR has built-in error detection and correction mechanisms, including ECC and parity checking. In the event of an error, the SDRAM can generate an interrupt signal to alert the system. It's essential to implement error handling and correction mechanisms in your design to ensure data integrity.