Part Details for IS42S16100E-7TL-TR by Integrated Silicon Solution Inc
Results Overview of IS42S16100E-7TL-TR by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IS42S16100E-7TL-TR Information
IS42S16100E-7TL-TR by Integrated Silicon Solution Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for IS42S16100E-7TL-TR
IS42S16100E-7TL-TR CAD Models
IS42S16100E-7TL-TR Part Data Attributes
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IS42S16100E-7TL-TR
Integrated Silicon Solution Inc
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IS42S16100E-7TL-TR
Integrated Silicon Solution Inc
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Package Description | TSOP2, | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e3 | |
| Length | 20.95 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Width | 10.16 mm |
Alternate Parts for IS42S16100E-7TL-TR
This table gives cross-reference parts and alternative options found for IS42S16100E-7TL-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16100E-7TL-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IS45S16100H-7TLA1-TR | Integrated Silicon Solution Inc | $0.6767 | Synchronous DRAM, | IS42S16100E-7TL-TR vs IS45S16100H-7TLA1-TR |
| IS45S16100H-7BLA1-TR | Integrated Silicon Solution Inc | $0.6982 | Synchronous DRAM, | IS42S16100E-7TL-TR vs IS45S16100H-7BLA1-TR |
| AS4C1M16S-7TCN | Alliance Memory Inc | $1.6986 | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50, TSOPII-50 | IS42S16100E-7TL-TR vs AS4C1M16S-7TCN |
| MSM56V16161N-7 | LAPIS Semiconductor Co Ltd | Check for Price | DRAM, | IS42S16100E-7TL-TR vs MSM56V16161N-7 |
| W9816G6JH-6I | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | IS42S16100E-7TL-TR vs W9816G6JH-6I |
| W9816G6JB-7I | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60, 6.40 X 10.10 MM, 0.65 MM PITCH, ROHS COMPLIANT, VFBGA-60 | IS42S16100E-7TL-TR vs W9816G6JB-7I |
| W9816G6JB-7 | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60, 6.40 X 10.10 MM, 0.65 MM PITCH, ROHS COMPLIANT, VFBGA-60 | IS42S16100E-7TL-TR vs W9816G6JB-7 |
| W9816G6JH-6 | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | IS42S16100E-7TL-TR vs W9816G6JH-6 |
| W9816G6JH-7I | Winbond Electronics Corp | Check for Price | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, ROHS COMPLIANT, TSOP2-50 | IS42S16100E-7TL-TR vs W9816G6JH-7I |
IS42S16100E-7TL-TR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IS42S16100E-7TL-TR is 0°C to 70°C, with an extended temperature range of -40°C to 85°C available for industrial-grade applications.
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To ensure signal integrity and reduce noise, it is recommended to use a low-impedance PCB design, add decoupling capacitors near the SDRAM, and use a clock signal with a high slew rate. Additionally, consider using a signal integrity analysis tool to simulate and optimize your design.
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The recommended refresh rate for the IS42S16100E-7TL-TR is 3.9 μs, which is a typical value for SDRAMs. A higher refresh rate can increase power consumption, while a lower refresh rate can lead to data corruption. The optimal refresh rate depends on the specific application and operating conditions.
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Yes, the IS42S16100E-7TL-TR is suitable for low-power designs. It has a power-down mode that reduces power consumption to 10 mW (typical) when the device is not in use. Additionally, the SDRAM has a self-refresh mode that allows it to retain data while reducing power consumption.
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To handle errors and data corruption, it is recommended to implement error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), in your design. Additionally, consider using a SDRAM controller with built-in error detection and correction capabilities.