Part Details for IRLZ44NLPBF by Infineon Technologies AG
Results Overview of IRLZ44NLPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLZ44NLPBF Information
IRLZ44NLPBF by Infineon Technologies AG is an Other Transistor.
Other Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLZ44NLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Vyrian | Transistors | 793 |
|
RFQ |
Part Details for IRLZ44NLPBF
IRLZ44NLPBF CAD Models
IRLZ44NLPBF Part Data Attributes
|
|
IRLZ44NLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRLZ44NLPBF
Infineon Technologies AG
Transistor
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-262 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 3.8 W | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRLZ44NLPBF Frequently Asked Questions (FAQ)
-
The maximum junction temperature that the IRLZ44NLPBF can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
-
To calculate the power dissipation of the IRLZ44NLPBF, you need to know the drain-source on-state resistance (RDS(on)), the drain current (ID), and the voltage across the device (VDS). The power dissipation can be calculated using the formula: P = RDS(on) * ID^2 + VDS * ID. You can find the RDS(on) value in the datasheet.
-
The recommended gate drive voltage for the IRLZ44NLPBF is between 10V and 15V. A higher gate drive voltage can reduce the turn-on resistance and improve the switching performance, but it may also increase the power consumption and electromagnetic interference (EMI).
-
Yes, the IRLZ44NLPBF is suitable for high-frequency switching applications up to 1MHz. However, you need to ensure that the device is properly cooled and the switching losses are minimized to prevent overheating. You may also need to add additional components, such as snubbers or filters, to reduce the electromagnetic interference (EMI) and ensure reliable operation.
-
To protect the IRLZ44NLPBF from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. You can also add a fuse or a circuit breaker to disconnect the power supply in case of an overcurrent condition. Additionally, you can use a gate driver with built-in overcurrent protection to prevent the device from exceeding its maximum current rating.