Part Details for IRLZ24 by Vishay Siliconix
Results Overview of IRLZ24 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRLZ24 Information
IRLZ24 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRLZ24
IRLZ24 CAD Models
IRLZ24 Part Data Attributes
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IRLZ24
Vishay Siliconix
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Datasheet
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IRLZ24
Vishay Siliconix
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 64.1 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLZ24
This table gives cross-reference parts and alternative options found for IRLZ24. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLZ24, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRLZ24 | Texas Instruments | Check for Price | 17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRLZ24 vs IRLZ24 |
IRLZ24 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLZ24 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V to 4V, and a drain-source voltage (Vds) within the recommended range of 1.5V to 24V.
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To minimize parasitic inductance and capacitance, use a compact PCB layout with short leads, and place the IRLZ24 close to the power source. Avoid using long traces and vias, and use a solid ground plane to reduce electromagnetic interference (EMI).
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Yes, the IRLZ24 is suitable for high-frequency switching applications up to 1MHz, but be aware of the device's switching characteristics, such as rise and fall times, and ensure proper PCB layout and decoupling to minimize ringing and oscillations.
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To protect the IRLZ24 from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to limit the voltage, and add a current-sensing resistor or a fuse to detect and respond to overcurrent conditions.