Part Details for IRLR3105TRPBF by Infineon Technologies AG
Results Overview of IRLR3105TRPBF by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLR3105TRPBF Information
IRLR3105TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLR3105TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9236
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Newark | Mosfet, N-Ch, 55V, 25A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:25A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.03Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon IRLR3105TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2232 |
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$0.6260 / $1.1900 | Buy Now |
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DISTI #
IRLR3105TRPBFCT-ND
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DigiKey | MOSFET N-CH 55V 25A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4066 In Stock |
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$0.4216 / $0.9700 | Buy Now |
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DISTI #
IRLR3105TRPBF
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Avnet Americas | Power MOSFET, N Channel, 55 V, 25 A, 0.03 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRLR3105TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3456 / $0.3528 | Buy Now |
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DISTI #
IRLR3105TRPBF
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Avnet Americas | Power MOSFET, N Channel, 55 V, 25 A, 0.03 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRLR3105TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3233 / $0.3458 | Buy Now |
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DISTI #
942-IRLR3105TRPBF
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Mouser Electronics | MOSFETs 55V 1 N-CH HEXFET 37mOhms 13.3nC RoHS: Compliant | 22579 |
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$0.4210 / $0.8900 | Buy Now |
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DISTI #
V79:2366_29214526
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Arrow Electronics | Trans MOSFET N-CH Si 55V 25A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 2148 | Americas - 14000 |
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$0.3724 / $0.6305 | Buy Now |
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DISTI #
E02:0323_00175681
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Arrow Electronics | Trans MOSFET N-CH Si 55V 25A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Date Code: 2513 | Europe - 8000 |
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$0.4233 | Buy Now |
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DISTI #
V72:2272_13890031
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Arrow Electronics | Trans MOSFET N-CH Si 55V 25A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2349 Container: Cut Strips | Americas - 460 |
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$0.6368 / $0.6613 | Buy Now |
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DISTI #
70019059
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RS | MOSFET, 55V, 25A, 37 MOHM, 13.3 NC QG, LOGIC LEVEL, D-PAK Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.0400 / $1.2100 | RFQ |
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Future Electronics | Single N-Channel 55 V 37 mOhm 13.3 nC HEXFET® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 2000Reel |
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$0.3600 / $0.3750 | Buy Now |
Part Details for IRLR3105TRPBF
IRLR3105TRPBF CAD Models
IRLR3105TRPBF Part Data Attributes
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IRLR3105TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR3105TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.037 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR3105TRPBF
This table gives cross-reference parts and alternative options found for IRLR3105TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR3105TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLR3105TRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR3105TRPBF vs IRLR3105TRRPBF |
| IRLR3105TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR3105TRPBF vs IRLR3105TRPBF |
| AUIRLR3105 | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRLR3105TRPBF vs AUIRLR3105 |
| AUIRLR3105TRR | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRLR3105TRPBF vs AUIRLR3105TRR |
| IRLR3105PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR3105TRPBF vs IRLR3105PBF |
| IRLR3105 | International Rectifier | Check for Price | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | IRLR3105TRPBF vs IRLR3105 |
| IRLR3105TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR3105TRPBF vs IRLR3105TRLPBF |
| AUIRLR3105 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRLR3105TRPBF vs AUIRLR3105 |
| IRLR3105TRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR3105TRPBF vs IRLR3105TRLPBF |
| AUIRLR3105TRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRLR3105TRPBF vs AUIRLR3105TRL |
IRLR3105TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLR3105TRPBF is -55°C to 150°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
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Infineon provides a reference design and layout guidelines in the application note AN2013-01, which should be followed for optimal thermal performance and reliability.
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Yes, the IRLR3105TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and filtering to minimize EMI and ringing.
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Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and consider using a fuse or PTC resettable fuse to prevent damage from excessive current.