Part Details for IRLR120NTRPBF by International Rectifier
Results Overview of IRLR120NTRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLR120NTRPBF Information
IRLR120NTRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLR120NTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),TO-252AA | 1592 |
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$0.6956 / $1.9875 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),TO-252AA | 135 |
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$0.4313 / $0.8625 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),TO-252AA | 4 |
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$0.5175 | Buy Now |
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Vyrian | Transistors | 29749 |
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RFQ |
Part Details for IRLR120NTRPBF
IRLR120NTRPBF CAD Models
IRLR120NTRPBF Part Data Attributes
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IRLR120NTRPBF
International Rectifier
Buy Now
Datasheet
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IRLR120NTRPBF
International Rectifier
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | LEAD FREE, PLASTIC, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.225 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR120NTRPBF
This table gives cross-reference parts and alternative options found for IRLR120NTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR120NTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRLR120NTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | IRLR120NTRPBF vs AUIRLR120NTRR |
| IRLR120NTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRLR120NTRPBF vs IRLR120NTRL |
| AUIRLR120N | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | IRLR120NTRPBF vs AUIRLR120N |
| IRLR120NTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRLR120NTRPBF vs IRLR120NTRR |
| IRLR120N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRLR120NTRPBF vs IRLR120N |
IRLR120NTRPBF Frequently Asked Questions (FAQ)
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The thermal resistance of the IRLR120NTRPBF is typically around 2.5°C/W (junction-to-case) and 62°C/W (junction-to-ambient) when mounted on a 1in² copper pad.
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Yes, the IRLR120NTRPBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate charge, and layout to minimize ringing and ensure reliable operation.
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To ensure proper cooling, provide a sufficient heat sink, use thermal interface material, and maintain a low thermal resistance between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the maximum power dissipation (PD) of 78W.
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The recommended gate drive voltage for the IRLR120NTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses but may also increase gate charge and power consumption.
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Yes, you can use multiple IRLR120NTRPBF devices in parallel to increase current handling, but it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.