Part Details for IRLMS2002TRPBF by International Rectifier
Results Overview of IRLMS2002TRPBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLMS2002TRPBF Information
IRLMS2002TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLMS2002TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 91 |
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RFQ | ||
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Quest Components | MOSFET N-CH 20V 6.5A 6-TSOP | 1027 |
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$0.8365 / $2.3900 | Buy Now |
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Vyrian | Transistors | 47224 |
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RFQ |
Part Details for IRLMS2002TRPBF
IRLMS2002TRPBF CAD Models
IRLMS2002TRPBF Part Data Attributes
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IRLMS2002TRPBF
International Rectifier
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Datasheet
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IRLMS2002TRPBF
International Rectifier
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | MICRO-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLMS2002TRPBF
This table gives cross-reference parts and alternative options found for IRLMS2002TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS2002TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLMS2002 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | IRLMS2002TRPBF vs IRLMS2002 |
| IRLMS2002TR | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | IRLMS2002TRPBF vs IRLMS2002TR |
| IRLMS2002TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | IRLMS2002TRPBF vs IRLMS2002TR |
IRLMS2002TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLMS2002TRPBF is -55°C to 150°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The recommended gate drive voltage for the IRLMS2002TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRLMS2002TRPBF can be used in a parallel configuration to increase current handling, but ensure proper synchronization and thermal management to avoid uneven current sharing.
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Use a suitable overvoltage protection circuit and a current sense resistor to monitor and limit the current, and consider adding a fuse or a current limiter to prevent damage from overcurrent conditions.