Datasheets
IRLML2803TRPBF-1 by:

Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO3, 3 PIN

Part Details for IRLML2803TRPBF-1 by Infineon Technologies AG

Results Overview of IRLML2803TRPBF-1 by Infineon Technologies AG

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IRLML2803TRPBF-1 Information

IRLML2803TRPBF-1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRLML2803TRPBF-1

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IRLML2803TRPBF-1 Part Data Attributes

IRLML2803TRPBF-1 Infineon Technologies AG
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IRLML2803TRPBF-1 Infineon Technologies AG Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO3, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.54 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for IRLML2803TRPBF-1

This table gives cross-reference parts and alternative options found for IRLML2803TRPBF-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2803TRPBF-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLML2803GTRPBF International Rectifier Check for Price Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 IRLML2803TRPBF-1 vs IRLML2803GTRPBF
Part Number Manufacturer Composite Price Description Compare
NDS351ANL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 IRLML2803TRPBF-1 vs NDS351ANL99Z

IRLML2803TRPBF-1 Related Parts

IRLML2803TRPBF-1 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout for the IRLML2803TRPBF-1 in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.

  • The IRLML2803TRPBF-1 requires a bias voltage of 2.5V to 5V on the gate pin (Vgs) to operate within its specified parameters. Ensure that the bias voltage is stable and within the recommended range to achieve optimal performance.

  • The maximum allowed power dissipation for the IRLML2803TRPBF-1 is 2.5W. Exceeding this limit can lead to device failure or reduced lifespan. Ensure that the device is operated within its thermal limits to prevent overheating.

  • Yes, the IRLML2803TRPBF-1 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize losses and ringing.

  • The IRLML2803TRPBF-1 is a sensitive electronic component and requires proper storage and handling to prevent damage. Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or leads to prevent electrostatic discharge (ESD) damage.

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