Part Details for IRLML2502TRPBF-1 by Infineon Technologies AG
Results Overview of IRLML2502TRPBF-1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRLML2502TRPBF-1 Information
IRLML2502TRPBF-1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLML2502TRPBF-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88077381
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Verical | Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 2084 Package Multiple: 1 Date Code: 2301 | Americas - 21000 |
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$0.1800 | Buy Now |
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Rochester Electronics | IRLML2502 - HexFET Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 21800 |
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$0.0893 / $0.1440 | Buy Now |
Part Details for IRLML2502TRPBF-1
IRLML2502TRPBF-1 CAD Models
IRLML2502TRPBF-1 Part Data Attributes
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IRLML2502TRPBF-1
Infineon Technologies AG
Buy Now
Datasheet
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IRLML2502TRPBF-1
Infineon Technologies AG
Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 66 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.25 W | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
IRLML2502TRPBF-1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IRLML2502TRPBF-1 is a 3x3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
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To ensure reliability in high-temperature applications, follow the recommended operating conditions, use a suitable thermal management strategy, and consider derating the device's power handling capabilities. Additionally, ensure that the PCB design and assembly meet the recommended guidelines.
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Yes, the IRLML2502TRPBF-1 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB design and layout minimize parasitic inductance and capacitance.
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To protect the IRLML2502TRPBF-1 from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider implementing ESD protection circuits in the design.
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The recommended gate drive voltage for the IRLML2502TRPBF-1 is between 4.5V and 10V. However, the optimal gate drive voltage may vary depending on the specific application and requirements.