Part Details for IRLML2402 by International Rectifier
Results Overview of IRLML2402 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLML2402 Information
IRLML2402 by International Rectifier is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLML2402
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2120 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,760MA I(D),TO-236 | 860 |
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$0.1830 / $0.6100 | Buy Now |
Part Details for IRLML2402
IRLML2402 CAD Models
IRLML2402 Part Data Attributes
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IRLML2402
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRLML2402
International Rectifier
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | SOT-23 | |
Package Description | MICRO3, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 1.2 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.34 W | |
Power Dissipation-Max (Abs) | 0.28 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLML2402
This table gives cross-reference parts and alternative options found for IRLML2402. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML2402, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRLML2402TRPBF | Infineon Technologies AG | $0.1129 | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN | IRLML2402 vs IRLML2402TRPBF |
IRLML2402GTRPBF | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML2402 vs IRLML2402GTRPBF |
IRLML2402GTRPBF | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML2402 vs IRLML2402GTRPBF |
IRLML2402TR | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN | IRLML2402 vs IRLML2402TR |
IRLML2402GPBF | Infineon Technologies AG | Check for Price | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML2402 vs IRLML2402GPBF |
IRLML2402TRPBF | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN | IRLML2402 vs IRLML2402TRPBF |
DMN2112SN-7 | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SC-59, 3 PIN | IRLML2402 vs DMN2112SN-7 |
IRLML2402TRHR | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 0.0012A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | IRLML2402 vs IRLML2402TRHR |
IRLML2402 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLML2402 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure proper biasing, make sure to provide a stable voltage supply within the recommended range (4.5V to 5.5V) and maintain a minimum gate-source voltage (Vgs) of 4.5V for the MOSFET to turn on fully.
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For optimal thermal performance, use a PCB with a solid copper ground plane, and ensure good thermal conductivity between the device and the heat sink. Keep the leads as short as possible and use a low-ESR capacitor for decoupling.
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Use a voltage regulator or a voltage clamp to limit the voltage supply to the recommended range. Add a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. Also, consider using a TVS diode for overvoltage protection.
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Use a gate driver IC or a discrete transistor-based driver circuit to provide a high-current, low-impedance drive to the gate. Ensure the driver circuit can supply the required gate charge (Qg) and maintain a fast rise and fall time (tr and tf) for optimal switching performance.