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Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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IRLML0030TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
52R2613
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Newark | N Channel Mosfet, 30V, 5.3A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IRLML0030TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 25340 |
|
$0.1640 / $0.4320 | Buy Now |
DISTI #
IRLML0030TRPBFCT-ND
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DigiKey | MOSFET N-CH 30V 5.3A SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
135735 In Stock |
|
$0.0766 / $0.3700 | Buy Now |
DISTI #
IRLML0030TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRLML0030TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 6000 |
|
$0.0626 / $0.0639 | Buy Now |
DISTI #
52R2613
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Avnet Americas | Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 52R2613) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 13 Weeks, 3 Days Container: Ammo Pack | 12244 Partner Stock |
|
$0.1730 / $0.3330 | Buy Now |
DISTI #
942-IRLML0030TRPBF
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Mouser Electronics | MOSFETs MOSFT 30V 5.2A 28mOhm 3.6nC Qg RoHS: Compliant | 245079 |
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$0.0740 / $0.3600 | Buy Now |
DISTI #
70019834
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RS | IRLML0030TRPBF N-channel MOSFET Transistor, 5.3 A, 30 V, 3-Pin SOT-23 Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.1970 / $0.2820 | RFQ |
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Future Electronics | Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 39000Reel |
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$0.0710 / $0.0763 | Buy Now |
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Future Electronics | Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.0710 / $0.0763 | Buy Now |
DISTI #
79357085
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Verical | Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 326 Package Multiple: 1 Date Code: 2247 | Americas - 382848 |
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$0.0654 / $0.1310 | Buy Now |
DISTI #
79005781
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Verical | Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 341 Package Multiple: 1 Date Code: 2301 | Americas - 6000 |
|
$0.2029 / $0.2304 | Buy Now |
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IRLML0030TRPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLML0030TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 13 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 0.027 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 39 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.3 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRLML0030TRPBF is -55°C to 150°C.
Yes, the IRLML0030TRPBF is suitable for high-frequency applications up to 1 GHz due to its low Rds(on) and low gate charge.
The recommended gate drive voltage for the IRLML0030TRPBF is between 4.5V and 10V.
Yes, the IRLML0030TRPBF is AEC-Q101 qualified, making it suitable for automotive applications.
The maximum current rating for the IRLML0030TRPBF is 30A.