Part Details for IRLL024N by International Rectifier
Results Overview of IRLL024N by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRLL024N Information
IRLL024N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLL024N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,4.4A I(D),SOT-223 | 123 |
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$0.4600 / $0.6900 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,4.4A I(D),SOT-223 | 40 |
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$1.2500 / $2.5000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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Win Source Electronics | HEXFET Power MOSFET | 40000 |
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$0.2021 / $0.2610 | Buy Now |
Part Details for IRLL024N
IRLL024N CAD Models
IRLL024N Part Data Attributes
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IRLL024N
International Rectifier
Buy Now
Datasheet
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IRLL024N
International Rectifier
Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |