Part Details for IRL640STRRPBF by Vishay Intertechnologies
Results Overview of IRL640STRRPBF by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRL640STRRPBF Information
IRL640STRRPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRL640STRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRL640STRRPBF
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Avnet Americas | LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRL640STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$1.2459 / $1.3237 | Buy Now |
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DISTI #
844-IRL640STRRPBF
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Mouser Electronics | MOSFETs N-Chan 200V 17 Amp RoHS: Compliant | 1445 |
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$1.2300 / $2.6800 | Buy Now |
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DISTI #
IRL640STRRPBF
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TTI | MOSFETs N-Chan 200V 17 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$1.1000 / $1.1900 | Buy Now |
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DISTI #
IRL640STRRPBF
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EBV Elektronik | LOGIC MOSFET NCHANNEL 200V (Alt: IRL640STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2110 |
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RFQ |
Part Details for IRL640STRRPBF
IRL640STRRPBF CAD Models
IRL640STRRPBF Part Data Attributes
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IRL640STRRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRL640STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | D2PAK | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 25 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL640STRRPBF
This table gives cross-reference parts and alternative options found for IRL640STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL640STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHL640STRL-GE3 | Vishay Intertechnologies | $1.1110 | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IRL640STRRPBF vs SIHL640STRL-GE3 |
| IRL640STRLPBF | Vishay Intertechnologies | $1.1843 | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640STRLPBF |
| IRL640S | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640S |
| IRL640S | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640S |
| IRL640S | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640S |
| IRL640STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640STRR |
| SIHL640S-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 17 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power | IRL640STRRPBF vs SIHL640S-GE3 |
| IRL640SR | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRL640STRRPBF vs IRL640SR |
| IRL640STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640STRLPBF |
| IRL640SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | IRL640STRRPBF vs IRL640SPBF |
IRL640STRRPBF Frequently Asked Questions (FAQ)
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The thermal resistance of the IRL640STRRPBF is typically around 2.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
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Yes, the IRL640STRRPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate charge, and layout parasitics to ensure reliable operation.
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To ensure proper cooling, provide a sufficient heat sink, use thermal interface material (TIM) to reduce thermal resistance, and consider the PCB layout to minimize thermal impedance. Additionally, follow Vishay's recommended thermal design guidelines.
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The recommended gate drive voltage for the IRL640STRRPBF is between 4.5 V and 10 V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
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Yes, you can use multiple IRL640STRRPBF devices in parallel to increase current handling. However, it's crucial to ensure proper gate drive synchronization, layout symmetry, and thermal management to prevent uneven current sharing and thermal runaway.