Part Details for IRL520NSPBF by International Rectifier
Results Overview of IRL520NSPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRL520NSPBF Information
IRL520NSPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRL520NSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 129 |
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Bristol Electronics | 13 |
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RFQ |
Part Details for IRL520NSPBF
IRL520NSPBF CAD Models
IRL520NSPBF Part Data Attributes
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IRL520NSPBF
International Rectifier
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Datasheet
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IRL520NSPBF
International Rectifier
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.22 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL520NSPBF
This table gives cross-reference parts and alternative options found for IRL520NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL520NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRL520NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRL520NSPBF vs IRL520NSTRL |
| IRF520NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL520NSPBF vs IRF520NSPBF |
| IRL520NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRL520NSPBF vs IRL520NS |
| IRF520NS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRL520NSPBF vs IRF520NS |
| IRL520NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRL520NSPBF vs IRL520NS |
| IRL520NSTRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL520NSPBF vs IRL520NSTRLPBF |
IRL520NSPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRL520NSPBF is -55°C to 150°C.
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To ensure proper thermal management, it is recommended to attach a heat sink to the device, and to ensure good thermal conductivity between the device and the heat sink. Additionally, the PCB should be designed to minimize thermal resistance.
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The recommended gate drive voltage for the IRL520NSPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRL520NSPBF from overvoltage and overcurrent, it is recommended to use a voltage regulator to regulate the voltage supply, and to add overcurrent protection devices such as fuses or current sensors.
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The maximum allowable power dissipation for the IRL520NSPBF is 125W, but this can be increased with proper heat sinking and thermal management.