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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRL40B209 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
53Y4833
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Newark | Mosfet, N-Ch, 40V, 195A, To-220Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:195A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V, Msl:- Rohs Compliant: Yes |Infineon IRL40B209 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 25 |
|
$1.7000 | Buy Now |
DISTI #
85986230
|
Verical | Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 215 Package Multiple: 1 Date Code: 2201 | Americas - 1250 |
|
$1.4750 / $1.7500 | Buy Now |
DISTI #
87044933
|
Verical | Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 215 Package Multiple: 1 Date Code: 2101 | Americas - 950 |
|
$1.4750 / $1.7500 | Buy Now |
DISTI #
66395084
|
Verical | Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 30 Package Multiple: 1 | Americas - 839 |
|
$1.2700 / $2.6300 | Buy Now |
|
Rochester Electronics | IRL40B209 - TRENCH <= 40V RoHS: Compliant Status: Obsolete Min Qty: 1 | 2200 |
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$1.1800 / $1.4700 | Buy Now |
DISTI #
IRL40B209
|
Chip One Stop | Semiconductors RoHS: Compliant pbFree: No Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 839 |
|
$0.9340 / $2.5700 | Buy Now |
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IRL40B209
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL40B209
Infineon Technologies AG
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1420 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 195 A | |
Drain-source On Resistance-Max | 0.00125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 1370 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 780 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRL40B209 is -55°C to 175°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 1V and 40V.
The recommended gate resistor value for the IRL40B209 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
To protect the IRL40B209 from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.
The maximum allowable power dissipation for the IRL40B209 is 125W, but this can be increased with proper heat sinking and thermal management.