Part Details for IRL2910STRLPBF by International Rectifier
Results Overview of IRL2910STRLPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRL2910STRLPBF Information
IRL2910STRLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRL2910STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | HEXFET Power MOSFET Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 4194 |
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RFQ |
Part Details for IRL2910STRLPBF
IRL2910STRLPBF CAD Models
IRL2910STRLPBF Part Data Attributes
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IRL2910STRLPBF
International Rectifier
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Datasheet
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IRL2910STRLPBF
International Rectifier
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 190 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL2910STRLPBF
This table gives cross-reference parts and alternative options found for IRL2910STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRL2910STRLPBF | Infineon Technologies AG | $2.3781 | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910STRLPBF |
| IRL2910SPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910SPBF |
| IRL2910SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910SPBF |
| IRL2910STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910STRRPBF |
| IRL2910STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRL2910STRLPBF vs IRL2910STRR |
| IRL2910STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910STRLPBF vs IRL2910STRRPBF |
| 2SK3358 | NEC Electronics Group | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN | IRL2910STRLPBF vs 2SK3358 |
| IRL2910 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRL2910STRLPBF vs IRL2910 |
| MTB55N10ELT4 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRL2910STRLPBF vs MTB55N10ELT4 |
| IRL2910PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRL2910STRLPBF vs IRL2910PBF |
IRL2910STRLPBF Frequently Asked Questions (FAQ)
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The thermal resistance of the IRL2910STRLPBF is typically around 3.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
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Yes, the IRL2910STRLPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure reliable operation.
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To ensure proper biasing, follow the recommended gate drive voltage and current requirements specified in the datasheet. Additionally, consider the input capacitance and gate resistance to ensure stable operation.
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The maximum allowed voltage for the IRL2910STRLPBF is 30V. Exceeding this voltage can lead to device damage or failure.
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Yes, you can use multiple IRL2910STRLPBF devices in parallel to increase current handling. However, it's crucial to ensure proper gate drive synchronization and thermal management to avoid uneven current sharing and thermal runaway.