Datasheets
IRL2910SPBF by:
Infineon Technologies AG

Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRL2910SPBF by Infineon Technologies AG

Results Overview of IRL2910SPBF by Infineon Technologies AG

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IRL2910SPBF Information

IRL2910SPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRL2910SPBF

Part # Distributor Description Stock Price Buy
DISTI # IRL2910SPBF-ND
DigiKey MOSFET N-CH 100V 55A D2PAK Lead time: 39 Weeks Container: Tube Limited Supply - Call
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Part Details for IRL2910SPBF

IRL2910SPBF CAD Models

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IRL2910SPBF Part Data Attributes

IRL2910SPBF Infineon Technologies AG
Buy Now Datasheet
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IRL2910SPBF Infineon Technologies AG Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 55 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 330 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 3.8 W
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 190 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRL2910SPBF

This table gives cross-reference parts and alternative options found for IRL2910SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRL2910SPBF International Rectifier Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL2910SPBF vs IRL2910SPBF
IRL2910STRR International Rectifier Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRL2910SPBF vs IRL2910STRR
Part Number Manufacturer Composite Price Description Compare
IRL2910STRLPBF Infineon Technologies AG $2.4748 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL2910SPBF vs IRL2910STRLPBF
IRL2910STRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL2910SPBF vs IRL2910STRRPBF
IRL2910STRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL2910SPBF vs IRL2910STRRPBF
IRL2910STRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRL2910SPBF vs IRL2910STRLPBF
2SK3358 NEC Electronics Group Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN IRL2910SPBF vs 2SK3358
IRL2910SHR International Rectifier Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRL2910SPBF vs IRL2910SHR
MTB55N10EL Motorola Mobility LLC Check for Price 55A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET IRL2910SPBF vs MTB55N10EL
IRL2910PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRL2910SPBF vs IRL2910PBF
IRL2910 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRL2910SPBF vs IRL2910
HUF76639S3S Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, IRL2910SPBF vs HUF76639S3S

IRL2910SPBF Related Parts

IRL2910SPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRL2910SPBF is -55°C to 150°C.

  • To ensure proper biasing, the IRL2910SPBF requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 1V and 30V.

  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink, and to ensure good thermal conductivity between the device and the heat sink.

  • To protect the IRL2910SPBF from ESD, it is recommended to handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.

  • The recommended soldering conditions for the IRL2910SPBF are a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method of wave soldering or reflow soldering.

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