Part Details for IRL2910SPBF by Infineon Technologies AG
Results Overview of IRL2910SPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRL2910SPBF Information
IRL2910SPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRL2910SPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRL2910SPBF-ND
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DigiKey | MOSFET N-CH 100V 55A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now |
Part Details for IRL2910SPBF
IRL2910SPBF CAD Models
IRL2910SPBF Part Data Attributes
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IRL2910SPBF
Infineon Technologies AG
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Datasheet
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IRL2910SPBF
Infineon Technologies AG
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 520 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 55 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 330 pF | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 3.8 W | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 190 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRL2910SPBF
This table gives cross-reference parts and alternative options found for IRL2910SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRL2910SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRL2910SPBF vs IRL2910SPBF |
IRL2910STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | IRL2910SPBF vs IRL2910STRR |
IRL2910SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRL2910SPBF is -55°C to 150°C.
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To ensure proper biasing, the IRL2910SPBF requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 1V and 30V.
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For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink, and to ensure good thermal conductivity between the device and the heat sink.
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To protect the IRL2910SPBF from ESD, it is recommended to handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.
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The recommended soldering conditions for the IRL2910SPBF are a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method of wave soldering or reflow soldering.