Part Details for IRHG9110SCS by Infineon Technologies AG
Results Overview of IRHG9110SCS by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Healthcare
Medical Imaging
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Renewable Energy
IRHG9110SCS Information
IRHG9110SCS by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRHG9110SCS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IRHG9110SCS
|
Avnet Americas | Transistor MOSFET Array Quad P-CH 100V 0.75A 14-Pin MO-036AB - Bulk (Alt: IRHG9110SCS) Min Qty: 50 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ |
Part Details for IRHG9110SCS
IRHG9110SCS CAD Models
IRHG9110SCS Part Data Attributes
|
|
IRHG9110SCS
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRHG9110SCS
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.75A I(D), 100V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB,
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Configuration | SEPARATE, 4 ELEMENTS | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.75 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-036AB | |
| JESD-30 Code | R-CDIP-T14 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |