Part Details for IRGSL6B60KDPBF by Infineon Technologies AG
Results Overview of IRGSL6B60KDPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
IRGSL6B60KDPBF Information
IRGSL6B60KDPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGSL6B60KDPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70018514
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RS | 600V Ultrafast 10-30 kHz COPACK IGBT In a TO-262 Package Min Qty: 250 Package Multiple: 1 Container: Bulk | 0 |
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$2.8000 / $3.5000 | RFQ |
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Rochester Electronics | Discrete IGBT with Anti-Parallel Diode RoHS: Compliant Status: Obsolete Min Qty: 1 | 229 |
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$0.8109 / $1.3100 | Buy Now |
Part Details for IRGSL6B60KDPBF
IRGSL6B60KDPBF CAD Models
IRGSL6B60KDPBF Part Data Attributes
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IRGSL6B60KDPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRGSL6B60KDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 13 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 27 ns | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-262 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 26 ns | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 258 ns | |
| Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for IRGSL6B60KDPBF
This table gives cross-reference parts and alternative options found for IRGSL6B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL6B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGSL6B60KD | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 | IRGSL6B60KDPBF vs IRGSL6B60KD |