Part Details for IRGSL30B60KPBF by Infineon Technologies AG
Results Overview of IRGSL30B60KPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRGSL30B60KPBF Information
IRGSL30B60KPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGSL30B60KPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001541980
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EBV Elektronik | Trans IGBT Chip NCH 600V 78A 3Pin3Tab TO262 (Alt: SP001541980) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for IRGSL30B60KPBF
IRGSL30B60KPBF CAD Models
IRGSL30B60KPBF Part Data Attributes
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IRGSL30B60KPBF
Infineon Technologies AG
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Datasheet
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IRGSL30B60KPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 75 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 42 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-262 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 370 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 39 ns | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 237 ns | |
Turn-on Time-Nom (ton) | 74 ns |
Alternate Parts for IRGSL30B60KPBF
This table gives cross-reference parts and alternative options found for IRGSL30B60KPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL30B60KPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRGSL30B60KPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 | IRGSL30B60KPBF vs IRGSL30B60KPBF |
IRGSL30B60K | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 | IRGSL30B60KPBF vs IRGSL30B60K |