Part Details for IRGSL10B60KDPBF by Infineon Technologies AG
Results Overview of IRGSL10B60KDPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRGSL10B60KDPBF Information
IRGSL10B60KDPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGSL10B60KDPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70018510
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RS | 600V Ultrafast 10-30 kHz COPACK IGBT IN A TO-262 Package Min Qty: 200 Package Multiple: 1 Container: Bulk | 0 |
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$2.8800 / $3.6100 | RFQ |
DISTI #
SP001545220
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EBV Elektronik | Trans IGBT Chip NCH 600V 22A 3Pin3Tab TO262 (Alt: SP001545220) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for IRGSL10B60KDPBF
IRGSL10B60KDPBF CAD Models
IRGSL10B60KDPBF Part Data Attributes
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IRGSL10B60KDPBF
Infineon Technologies AG
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Datasheet
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IRGSL10B60KDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 22 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 34 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-262 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 28 ns | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 276 ns | |
Turn-on Time-Nom (ton) | 50 ns |
Alternate Parts for IRGSL10B60KDPBF
This table gives cross-reference parts and alternative options found for IRGSL10B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL10B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRGSL10B60KD | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 | IRGSL10B60KDPBF vs IRGSL10B60KD |