Datasheets
IRGSL10B60KDPBF by:

Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRGSL10B60KDPBF by Infineon Technologies AG

Results Overview of IRGSL10B60KDPBF by Infineon Technologies AG

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IRGSL10B60KDPBF Information

IRGSL10B60KDPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRGSL10B60KDPBF

Part # Distributor Description Stock Price Buy
DISTI # 70018510
RS 600V Ultrafast 10-30 kHz COPACK IGBT IN A TO-262 Package Min Qty: 200 Package Multiple: 1 Container: Bulk 0
  • 200 $3.6100
  • 1,000 $3.4300
  • 2,000 $3.2500
  • 4,000 $3.0700
  • 20,000 $2.8800
$2.8800 / $3.6100 RFQ
DISTI # SP001545220
EBV Elektronik Trans IGBT Chip NCH 600V 22A 3Pin3Tab TO262 (Alt: SP001545220) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRGSL10B60KDPBF

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IRGSL10B60KDPBF Part Data Attributes

IRGSL10B60KDPBF Infineon Technologies AG
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IRGSL10B60KDPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 22 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 34 ns
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-262
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Qualification Status Not Qualified
Rise Time-Max (tr) 28 ns
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 276 ns
Turn-on Time-Nom (ton) 50 ns

Alternate Parts for IRGSL10B60KDPBF

This table gives cross-reference parts and alternative options found for IRGSL10B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL10B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRGSL10B60KD International Rectifier Check for Price Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 IRGSL10B60KDPBF vs IRGSL10B60KD

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