Datasheets
IRGS4064DPBF by:

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel,

Part Details for IRGS4064DPBF by Infineon Technologies AG

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IRGS4064DPBF Information

IRGS4064DPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRGS4064DPBF

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IRGS4064DPBF Part Data Attributes

IRGS4064DPBF Infineon Technologies AG
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IRGS4064DPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 600 V
Fall Time-Max (tf) 29 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 101 W
Rise Time-Max (tr) 23 ns
Surface Mount YES

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