Part Details for IRGR2B60KDPBF by Infineon Technologies AG
Results Overview of IRGR2B60KDPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRGR2B60KDPBF Information
IRGR2B60KDPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGR2B60KDPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
85990077
|
Verical | Trans IGBT Chip N-CH 600V 6.3A 35W 3-Pin(2+Tab) DPAK Tube Min Qty: 348 Package Multiple: 1 Date Code: 1401 | Americas - 886 |
|
$1.0796 | Buy Now |
|
|
Rochester Electronics | Discrete IGBT with Anti-Parallel Diode RoHS: Compliant Status: Obsolete Min Qty: 1 | 933 |
|
$0.5355 / $0.8637 | Buy Now |
|
DISTI #
SP001534018
|
EBV Elektronik | Trans IGBT Chip NCH 600V 63A 3Pin DPAK Tube (Alt: SP001534018) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IRGR2B60KDPBF
IRGR2B60KDPBF CAD Models
IRGR2B60KDPBF Part Data Attributes
|
|
IRGR2B60KDPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRGR2B60KDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 6.3A I(C), 600V V(BR)CES, N-Channel,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 6.3 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Fall Time-Max (tf) | 75 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Moisture Sensitivity Level | 1 | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Rise Time-Max (tr) | 25 ns | |
| Surface Mount | YES |
IRGR2B60KDPBF Frequently Asked Questions (FAQ)
-
The maximum junction temperature for the IRGR2B60KDPBF is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
-
Proper cooling of the IRGR2B60KDPBF is crucial to prevent overheating. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material if necessary. Also, consider the airflow and ambient temperature in the system design.
-
The recommended gate drive voltage for the IRGR2B60KDPBF is between 10V and 15V. However, it's essential to check the specific requirements for your application and ensure the gate drive voltage is within the recommended range to prevent damage to the device.
-
Yes, the IRGR2B60KDPBF is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as the rise and fall times, and ensure the system design can handle the associated losses and EMI.
-
To protect the IRGR2B60KDPBF from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Also, ensure the system design includes proper fault detection and protection mechanisms to prevent damage to the device.