Part Details for IRGP50B60PD1PBF by International Rectifier
Results Overview of IRGP50B60PD1PBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRGP50B60PD1PBF Information
IRGP50B60PD1PBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGP50B60PD1PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 2 |
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$11.7000 | Buy Now |
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Quest Components | TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,45A I(C),TO-247AC | 1 |
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$15.6000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 583 |
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RFQ |
Part Details for IRGP50B60PD1PBF
IRGP50B60PD1PBF CAD Models
IRGP50B60PD1PBF Part Data Attributes
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IRGP50B60PD1PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRGP50B60PD1PBF
International Rectifier
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-247AC | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY, LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 20 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 161 ns | |
| Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for IRGP50B60PD1PBF
This table gives cross-reference parts and alternative options found for IRGP50B60PD1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGP50B60PD1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGP50B60PD1-EPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IRGP50B60PD1PBF vs IRGP50B60PD1-EPBF |
| IRGP50B60PD1-EP | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | IRGP50B60PD1PBF vs IRGP50B60PD1-EP |
| IRGP50B60PD1-EP | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | IRGP50B60PD1PBF vs IRGP50B60PD1-EP |
| IRGP50B60PD1PBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | IRGP50B60PD1PBF vs IRGP50B60PD1PBF |
IRGP50B60PD1PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IRGP50B60PD1PBF is 150°C, as specified in the datasheet.
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Proper thermal management for the IRGP50B60PD1PBF involves ensuring good heat sinking, using thermal interface materials, and maintaining a clean and dust-free environment to prevent thermal impedance.
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The recommended gate resistance for the IRGP50B60PD1PBF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the IRGP50B60PD1PBF can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management to ensure reliable operation.
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The maximum allowable voltage transient for the IRGP50B60PD1PBF is 120% of the maximum rated voltage, as specified in the datasheet.