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Part Details for IRGP50B60PD1-EP by Infineon Technologies AG
Results Overview of IRGP50B60PD1-EP by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
IRGP50B60PD1-EP Information
IRGP50B60PD1-EP by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRGP50B60PD1-EP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001532834
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EBV Elektronik | Trans IGBT Chip NCH 600V 75A 3Pin3Tab TO247AD (Alt: SP001532834) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRGP50B60PD1-EP
IRGP50B60PD1-EP CAD Models
IRGP50B60PD1-EP Part Data Attributes
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IRGP50B60PD1-EP
Infineon Technologies AG
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Datasheet
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IRGP50B60PD1-EP
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 20 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 20 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 161 ns | |
| Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for IRGP50B60PD1-EP
This table gives cross-reference parts and alternative options found for IRGP50B60PD1-EP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGP50B60PD1-EP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGP50B60PD1-EPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IRGP50B60PD1-EP vs IRGP50B60PD1-EPBF |
| IRGP50B60PD1PBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | IRGP50B60PD1-EP vs IRGP50B60PD1PBF |
| IRGP50B60PD1-EP | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | IRGP50B60PD1-EP vs IRGP50B60PD1-EP |
| IRGP50B60PD1PBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | IRGP50B60PD1-EP vs IRGP50B60PD1PBF |
IRGP50B60PD1-EP Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IRGP50B60PD1-EP is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a temperature below 125°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate resistance for the IRGP50B60PD1-EP is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable operation of the IGBT.
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Yes, the IRGP50B60PD1-EP can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and synchronized to prevent uneven current sharing. Additionally, the gate drive circuitry should be designed to accommodate the parallel configuration.
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The maximum allowable voltage transient for the IRGP50B60PD1-EP is 120% of the maximum rated voltage, which is 600V. However, it's recommended to limit voltage transients to 10% of the maximum rated voltage to ensure reliable operation.