Datasheets
IRGIB7B60KDPBF by:

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, FULL PACK-3

Part Details for IRGIB7B60KDPBF by Infineon Technologies AG

Results Overview of IRGIB7B60KDPBF by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

IRGIB7B60KDPBF Information

IRGIB7B60KDPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRGIB7B60KDPBF

Part # Distributor Description Stock Price Buy
DISTI # IRGIB7B60KDPBF
TME Transistor: IGBT, 600V, 12A, 39W, TO220AB Min Qty: 1 0
  • 1 $2.1700
  • 3 $1.9500
  • 10 $1.6200
  • 50 $1.3700
$1.3700 / $2.1700 RFQ
DISTI # SP001536318
EBV Elektronik Trans IGBT Chip NCH 600V 12A 3Pin3Tab TO220AB (Alt: SP001536318) RoHS: Compliant Min Qty: 550 Package Multiple: 550 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRGIB7B60KDPBF

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IRGIB7B60KDPBF Part Data Attributes

IRGIB7B60KDPBF Infineon Technologies AG
Buy Now Datasheet
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IRGIB7B60KDPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, FULL PACK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220AB, FULL PACK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 12 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 56 ns
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 39 W
Qualification Status Not Qualified
Rise Time-Max (tr) 26 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 220 ns
Turn-on Time-Nom (ton) 43 ns

Alternate Parts for IRGIB7B60KDPBF

This table gives cross-reference parts and alternative options found for IRGIB7B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGIB7B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRGIB7B60KDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, FULL PACK-3 IRGIB7B60KDPBF vs IRGIB7B60KDPBF
IRGIB7B60KD International Rectifier Check for Price Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB, FULL PAK-3 IRGIB7B60KDPBF vs IRGIB7B60KD

IRGIB7B60KDPBF Related Parts

IRGIB7B60KDPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRGIB7B60KDPBF is -40°C to 150°C.

  • The maximum current rating for the IRGIB7B60KDPBF is 60A.

  • The voltage rating for the IRGIB7B60KDPBF is 600V.

  • Yes, the IRGIB7B60KDPBF is a fast recovery diode with a reverse recovery time of 35ns.

  • The typical junction capacitance of the IRGIB7B60KDPBF is 350pF.

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