Part Details for IRG7PH50K10DPBF by Infineon Technologies AG
Results Overview of IRG7PH50K10DPBF by Infineon Technologies AG
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRG7PH50K10DPBF Information
IRG7PH50K10DPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRG7PH50K10DPBF
IRG7PH50K10DPBF CAD Models
IRG7PH50K10DPBF Part Data Attributes
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IRG7PH50K10DPBF
Infineon Technologies AG
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Datasheet
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IRG7PH50K10DPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 90 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Fall Time-Max (tf) | 110 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 400 W | |
| Rise Time-Max (tr) | 80 ns | |
| Surface Mount | NO |
IRG7PH50K10DPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IRG7PH50K10DPBF is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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Proper cooling of the IRG7PH50K10DPBF is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a sufficient thermal conductivity. Additionally, consider using a thermal interface material to fill any gaps between the device and the heat sink.
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The recommended gate drive voltage for the IRG7PH50K10DPBF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions. Consult the datasheet and application notes for more information.
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Yes, the IRG7PH50K10DPBF is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may be affected by high-frequency operation. Consult the datasheet and application notes for more information on high-frequency operation.
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To protect the IRG7PH50K10DPBF from ESD, handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static package, and avoid touching the device's pins or leads.