Datasheets
IRG4PF50WPBF by:

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRG4PF50WPBF by International Rectifier

Results Overview of IRG4PF50WPBF by International Rectifier

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IRG4PF50WPBF Information

IRG4PF50WPBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRG4PF50WPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   25
RFQ
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 51A I(C), 900V V(BR)CES, N-CHANNEL, TO-247AC 20
  • 1 $10.1925
  • 4 $7.4745
  • 11 $6.7950
$6.7950 / $10.1925 Buy Now

Part Details for IRG4PF50WPBF

IRG4PF50WPBF CAD Models

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IRG4PF50WPBF Part Data Attributes

IRG4PF50WPBF International Rectifier
Buy Now Datasheet
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IRG4PF50WPBF International Rectifier Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 51 A
Collector-Emitter Voltage-Max 900 V
Configuration SINGLE
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 370 ns
Turn-on Time-Nom (ton) 54 ns

Alternate Parts for IRG4PF50WPBF

This table gives cross-reference parts and alternative options found for IRG4PF50WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PF50WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRG4PF50W International Rectifier Check for Price Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN IRG4PF50WPBF vs IRG4PF50W
Part Number Manufacturer Composite Price Description Compare
HGTP5N120BN Intersil Corporation Check for Price 21A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN IRG4PF50WPBF vs HGTP5N120BN
HGTP12N60B3D Intersil Corporation Check for Price 600V, N-CHANNEL IGBT, TO-220AB IRG4PF50WPBF vs HGTP12N60B3D
HGTP2N120CN Intersil Corporation Check for Price 2A, 1200V, N-CHANNEL IGBT, TO-220AB IRG4PF50WPBF vs HGTP2N120CN
HGTG12N60C3DR Intersil Corporation Check for Price 24A, 600V, N-CHANNEL IGBT, TO-247 IRG4PF50WPBF vs HGTG12N60C3DR
IRG4PH50UDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 IRG4PF50WPBF vs IRG4PH50UDPBF
HGT1S7N60C3DS9A Intersil Corporation Check for Price 14A, 600V, N-CHANNEL IGBT, TO-263AB IRG4PF50WPBF vs HGT1S7N60C3DS9A
IRG4BC20KDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 IRG4PF50WPBF vs IRG4BC20KDPBF
SGB15N60 Siemens Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB IRG4PF50WPBF vs SGB15N60
HGTG20N60B3D Intersil Corporation Check for Price 40A, 600V, N-CHANNEL IGBT, TO-247 IRG4PF50WPBF vs HGTG20N60B3D
IRG4IBC30SPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 IRG4PF50WPBF vs IRG4IBC30SPBF

IRG4PF50WPBF Related Parts

IRG4PF50WPBF Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the IRG4PF50WPBF is 175°C.

  • Yes, the IRG4PF50WPBF is suitable for high-frequency switching applications up to 100 kHz.

  • To ensure reliability, it is recommended to derate the power dissipation of the IRG4PF50WPBF at high temperatures, and to use a suitable heat sink to keep the junction temperature below 150°C.

  • The recommended gate drive voltage for the IRG4PF50WPBF is between 10V and 15V.

  • Yes, the IRG4PF50WPBF can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched and that the gate drive signals are synchronized.

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