Part Details for IRG4PF50WPBF by International Rectifier
Results Overview of IRG4PF50WPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRG4PF50WPBF Information
IRG4PF50WPBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRG4PF50WPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 25 |
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RFQ | ||
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Quest Components | INSULATED GATE BIPOLAR TRANSISTOR, 51A I(C), 900V V(BR)CES, N-CHANNEL, TO-247AC | 20 |
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$6.7950 / $10.1925 | Buy Now |
Part Details for IRG4PF50WPBF
IRG4PF50WPBF CAD Models
IRG4PF50WPBF Part Data Attributes
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IRG4PF50WPBF
International Rectifier
Buy Now
Datasheet
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IRG4PF50WPBF
International Rectifier
Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-247AC | |
Package Description | LEAD FREE PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 51 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 220 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 370 ns | |
Turn-on Time-Nom (ton) | 54 ns |
Alternate Parts for IRG4PF50WPBF
This table gives cross-reference parts and alternative options found for IRG4PF50WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PF50WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRG4PF50W | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | IRG4PF50WPBF vs IRG4PF50W |
IRG4PF50WPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IRG4PF50WPBF is 175°C.
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Yes, the IRG4PF50WPBF is suitable for high-frequency switching applications up to 100 kHz.
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To ensure reliability, it is recommended to derate the power dissipation of the IRG4PF50WPBF at high temperatures, and to use a suitable heat sink to keep the junction temperature below 150°C.
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The recommended gate drive voltage for the IRG4PF50WPBF is between 10V and 15V.
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Yes, the IRG4PF50WPBF can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched and that the gate drive signals are synchronized.