Part Details for IRG4PC50UPBF by International Rectifier
Results Overview of IRG4PC50UPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRG4PC50UPBF Information
IRG4PC50UPBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRG4PC50UPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ |
Part Details for IRG4PC50UPBF
IRG4PC50UPBF CAD Models
IRG4PC50UPBF Part Data Attributes
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IRG4PC50UPBF
International Rectifier
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Datasheet
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IRG4PC50UPBF
International Rectifier
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-247AC | |
Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 55 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 130 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 350 ns | |
Turn-on Time-Nom (ton) | 54 ns |
Alternate Parts for IRG4PC50UPBF
This table gives cross-reference parts and alternative options found for IRG4PC50UPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50UPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRG4PC50UPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | IRG4PC50UPBF vs IRG4PC50UPBF |
IRG4PC50UPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IRG4PC50UPBF is 175°C.
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Yes, the IRG4PC50UPBF is suitable for high-frequency switching applications up to 100 kHz.
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To ensure reliability, it is recommended to derate the device's power handling capability by 1.5% per degree Celsius above 25°C, and to use a suitable heat sink to maintain a safe junction temperature.
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The recommended gate drive voltage for the IRG4PC50UPBF is between 10V and 15V, with a maximum gate current of 5A.
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Yes, the IRG4PC50UPBF can be used in a parallel configuration to increase current handling, but it is recommended to use a current sharing technique to ensure equal current distribution among the devices.