Datasheets
IRG4PC30SPBF by:

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRG4PC30SPBF by International Rectifier

Results Overview of IRG4PC30SPBF by International Rectifier

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Applications Industrial Automation Electronic Manufacturing

IRG4PC30SPBF Information

IRG4PC30SPBF by International Rectifier is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRG4PC30SPBF

Part # Distributor Description Stock Price Buy
Rochester Electronics Discrete IGBT without Anti-Parallel Diode RoHS: Compliant Status: Obsolete Min Qty: 1 3
  • 25 $1.7200
  • 100 $1.6300
  • 500 $1.5500
  • 1,000 $1.4600
  • 10,000 $1.3800
$1.3800 / $1.7200 Buy Now
ComSIT USA STANDARD SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC ECCN: EAR99 RoHS: Compliant Stock DE - 50
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRG4PC30SPBF

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IRG4PC30SPBF Part Data Attributes

IRG4PC30SPBF International Rectifier
Buy Now Datasheet
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IRG4PC30SPBF International Rectifier Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 34 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 590 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1550 ns
Turn-on Time-Nom (ton) 40 ns

Alternate Parts for IRG4PC30SPBF

This table gives cross-reference parts and alternative options found for IRG4PC30SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRG4PC30S Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN IRG4PC30SPBF vs IRG4PC30S
IRG4PC30S International Rectifier Check for Price Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN IRG4PC30SPBF vs IRG4PC30S
IRG4PC30SPBF Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 IRG4PC30SPBF vs IRG4PC30SPBF
Part Number Manufacturer Composite Price Description Compare
HGTP5N120BN Intersil Corporation Check for Price 21A, 1200V, N-CHANNEL IGBT, TO-220AB ALTERNATE VERSION, 3 PIN IRG4PC30SPBF vs HGTP5N120BN
HGTP12N60B3D Intersil Corporation Check for Price 600V, N-CHANNEL IGBT, TO-220AB IRG4PC30SPBF vs HGTP12N60B3D
HGTP2N120CN Intersil Corporation Check for Price 2A, 1200V, N-CHANNEL IGBT, TO-220AB IRG4PC30SPBF vs HGTP2N120CN
HGTG12N60C3DR Intersil Corporation Check for Price 24A, 600V, N-CHANNEL IGBT, TO-247 IRG4PC30SPBF vs HGTG12N60C3DR
IRG4PH50UDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 IRG4PC30SPBF vs IRG4PH50UDPBF
HGT1S7N60C3DS9A Intersil Corporation Check for Price 14A, 600V, N-CHANNEL IGBT, TO-263AB IRG4PC30SPBF vs HGT1S7N60C3DS9A
IRG4BC20KDPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 IRG4PC30SPBF vs IRG4BC20KDPBF
SGB15N60 Siemens Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB IRG4PC30SPBF vs SGB15N60
HGTG20N60B3D Intersil Corporation Check for Price 40A, 600V, N-CHANNEL IGBT, TO-247 IRG4PC30SPBF vs HGTG20N60B3D
IRG4IBC30SPBF International Rectifier Check for Price Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 IRG4PC30SPBF vs IRG4IBC30SPBF

IRG4PC30SPBF Related Parts

IRG4PC30SPBF Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the IRG4PC30SPBF can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation and to ensure a long lifespan.

  • Yes, the IRG4PC30SPBF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal management, and layout to ensure reliable operation.

  • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good thermal contact between the device and the heat sink, and provide adequate airflow to dissipate heat.

  • The recommended gate drive voltage for the IRG4PC30SPBF is between 10 V and 15 V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.

  • Yes, the IRG4PC30SPBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.

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