Part Details for IRG4PC30SPBF by Infineon Technologies AG
Results Overview of IRG4PC30SPBF by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
IRG4PC30SPBF Information
IRG4PC30SPBF by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRG4PC30SPBF
IRG4PC30SPBF CAD Models
IRG4PC30SPBF Part Data Attributes
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IRG4PC30SPBF
Infineon Technologies AG
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Datasheet
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IRG4PC30SPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 34 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 590 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1550 ns | |
| Turn-on Time-Nom (ton) | 40 ns |
Alternate Parts for IRG4PC30SPBF
This table gives cross-reference parts and alternative options found for IRG4PC30SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRG4PC30S | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | IRG4PC30SPBF vs IRG4PC30S |
| IRG4PC30S | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | IRG4PC30SPBF vs IRG4PC30S |
| IRG4PC30SPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | IRG4PC30SPBF vs IRG4PC30SPBF |
IRG4PC30SPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IRG4PC30SPBF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
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To ensure proper cooling, make sure to provide a sufficient heat sink, apply a thermal interface material (TIM) between the device and heat sink, and ensure good airflow around the heat sink. The datasheet provides thermal resistance values to help with thermal design.
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The recommended gate drive voltage for the IRG4PC30SPBF is between 10V and 15V. However, the datasheet specifies a maximum gate-source voltage of ±20V, so ensure your gate drive circuitry stays within this range.
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Yes, the IRG4PC30SPBF is suitable for high-frequency switching applications due to its low switching losses and fast switching times. However, be sure to consider the device's maximum switching frequency, which is typically limited by the gate charge and output capacitance.
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To protect the IRG4PC30SPBF from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your circuit design. Additionally, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current.