Part Details for IRFZ48N by Infineon Technologies AG
Results Overview of IRFZ48N by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
IRFZ48N Information
IRFZ48N by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFZ48N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Win Source Electronics | MOSFET N-CH 55V 64A TO-220AB | 30000 |
|
$0.3000 / $0.3875 | Buy Now |
Part Details for IRFZ48N
IRFZ48N CAD Models
IRFZ48N Part Data Attributes
|
|
IRFZ48N
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFZ48N
Infineon Technologies AG
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220AB, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 64 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 210 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ48N
This table gives cross-reference parts and alternative options found for IRFZ48N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ48N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFZ48N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IRFZ48N vs AUIRFZ48N |
IRFZ48N Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) for the IRFZ48N is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN201-05, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.
-
To ensure proper thermal management, the IRFZ48N should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power loss, and the device's thermal pad should be soldered to the heat sink using a thermally conductive material. Additionally, the ambient temperature should be kept below 50°C to ensure reliable operation.
-
The recommended gate drive voltage for the IRFZ48N is between 10V and 15V. A higher gate drive voltage can improve the device's switching speed and reduce its on-state resistance, but it may also increase the risk of gate oxide damage. A lower gate drive voltage can reduce the risk of gate oxide damage, but it may also increase the device's switching losses.
-
To protect the IRFZ48N from electrostatic discharge (ESD), it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging and materials, and ensure that all personnel handling the device are grounded. Additionally, the device's pins should be connected to a low-impedance path to ground during handling and storage.
-
The maximum allowed dv/dt for the IRFZ48N is not explicitly stated in the datasheet, but it is typically limited to 10V/ns to prevent voltage-induced turn-on and ensure reliable operation. A slower dv/dt can reduce the risk of voltage-induced turn-on, but it may also increase the device's switching losses.