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Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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IRFZ46NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7145
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Newark | N Channel Mosfet, 55V, 53A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:53A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 39 |
|
$0.4220 | Buy Now |
DISTI #
IRFZ46NPBF-ND
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DigiKey | MOSFET N-CH 55V 53A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
22596 In Stock |
|
$0.3926 / $1.2500 | Buy Now |
DISTI #
63J7145
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Avnet Americas | Power MOSFET, N Channel, 55 V, 46 A, 0.0165 ohm, TO-220AB, Through Hole - Bulk (Alt: 63J7145) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Bulk | 39 Partner Stock |
|
$0.4980 / $1.1900 | Buy Now |
DISTI #
IRFZ46NPBF
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Avnet Americas | Power MOSFET, N Channel, 55 V, 46 A, 0.0165 ohm, TO-220AB, Through Hole - Rail/Tube (Alt: IRFZ46NPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$0.2869 / $0.2929 | Buy Now |
DISTI #
942-IRFZ46NPBF
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Mouser Electronics | MOSFETs MOSFT 55V 46A 16.5mOhm 48nC RoHS: Compliant | 969 |
|
$0.3430 / $1.2600 | Buy Now |
DISTI #
E02:0323_00010932
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Arrow Electronics | Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2452 | Europe - 8400 |
|
$0.3452 / $1.1911 | Buy Now |
|
Onlinecomponents.com | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 16.5 Milliohms, ID 53A, TO-220AB, PD 107W, -55de RoHS: Compliant |
763 Partner Stock |
|
$0.5910 / $0.7970 | Buy Now |
DISTI #
88768715
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Verical | Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 22 Package Multiple: 1 Date Code: 2452 | Americas - 8382 |
|
$0.4681 | Buy Now |
DISTI #
85987918
|
Verical | Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 643 Package Multiple: 1 Date Code: 2201 | Americas - 4687 |
|
$0.5836 | Buy Now |
DISTI #
85988150
|
Verical | Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 643 Package Multiple: 1 Date Code: 2101 | Americas - 1703 |
|
$0.5836 | Buy Now |
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IRFZ46NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFZ46NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-220AB, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 19 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 152 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 39 A | |
Drain-source On Resistance-Max | 0.0165 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 88 W | |
Power Dissipation-Max (Abs) | 107 W | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum operating temperature range for the IRFZ46NPBF is -55°C to 175°C.
To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
The maximum allowable voltage for the IRFZ46NPBF is 500V.
Use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or a current-sensing resistor, to prevent damage from overvoltage and overcurrent.
The typical turn-on time is around 10-20 ns, and the typical turn-off time is around 20-30 ns.