Part Details for IRFZ46N by International Rectifier
Results Overview of IRFZ46N by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFZ46N Information
IRFZ46N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFZ46N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 248 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,43A I(D),TO-220AB | 734 |
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$0.8125 / $1.6250 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for IRFZ46N
IRFZ46N CAD Models
IRFZ46N Part Data Attributes
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IRFZ46N
International Rectifier
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Datasheet
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IRFZ46N
International Rectifier
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 152 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 39 A | |
| Drain-source On Resistance-Max | 0.0165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 88 W | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ46N
This table gives cross-reference parts and alternative options found for IRFZ46N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ46N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFZ46NPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRFZ46N vs IRFZ46NPBF |
IRFZ46N Frequently Asked Questions (FAQ)
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The maximum SOA for the IRFZ46N is typically limited by the device's thermal characteristics and the application's specific requirements. However, as a general guideline, the maximum SOA is typically around 10-15V and 10-20A, depending on the junction temperature and the duration of the pulse.
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To ensure the IRFZ46N is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and for turn-off, bring Vgs down to around -5V to -10V. Additionally, use a gate driver with a sufficient current capability to charge and discharge the gate capacitance quickly.
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The maximum junction temperature (Tj) for the IRFZ46N is 175°C. It's essential to ensure the device operates within this temperature range to prevent thermal runaway and ensure reliable operation.
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Yes, the IRFZ46N can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the gate driver can provide the necessary current to charge and discharge the gate capacitance quickly.
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To protect the IRFZ46N from overvoltage and overcurrent, use a suitable voltage clamp or transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.