Part Details for IRFZ24NS by International Rectifier
Results Overview of IRFZ24NS by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFZ24NS Information
IRFZ24NS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFZ24NS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 56 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,17A I(D),TO-263AB | 1432 |
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$0.7560 / $1.8000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,17A I(D),TO-263AB | 131 |
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$1.5120 / $3.0240 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,17A I(D),TO-263AB | 40 |
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$2.2000 / $4.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,17A I(D),TO-263AB | 32 |
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$18.2040 / $22.1400 | Buy Now |
Part Details for IRFZ24NS
IRFZ24NS CAD Models
IRFZ24NS Part Data Attributes
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IRFZ24NS
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFZ24NS
International Rectifier
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 71 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 45 W | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ24NS
This table gives cross-reference parts and alternative options found for IRFZ24NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFZ24NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRFZ24NS vs AUIRFZ24NSTRR |
IRFZ24NS Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRFZ24NS is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device. The SOA is typically limited by the device's voltage and current ratings, as well as its thermal characteristics.
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To minimize switching losses, ensure that the IRFZ24NS is driven with a high enough gate-source voltage (Vgs) to fully enhance the device. A Vgs of at least 10V is recommended, with a rise time of less than 10ns. Additionally, use a low-impedance gate driver and a short gate lead to minimize ringing and overshoot.
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The maximum junction temperature (Tj) for the IRFZ24NS is 175°C, as stated in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and minimize thermal stress. A maximum operating temperature of 150°C is a common design guideline.
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Yes, the IRFZ24NS can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as its rise and fall times, and ensure that the driver and layout are optimized for high-frequency operation. Additionally, be aware of the device's parasitic capacitances and inductances, which can affect high-frequency performance.
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To protect the IRFZ24NS from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly connected to a ground plane and that the circuit is designed with ESD protection in mind, such as using ESD protection diodes or resistors.