Part Details for IRFZ24N by NXP Semiconductors
Results Overview of IRFZ24N by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFZ24N Information
IRFZ24N by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFZ24N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | N-channel enhancement mode TrenchMOS transistor | 191000 |
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$0.1386 / $0.1790 | Buy Now |
Part Details for IRFZ24N
IRFZ24N CAD Models
IRFZ24N Part Data Attributes
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IRFZ24N
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
IRFZ24N
NXP Semiconductors
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Additional Feature | ESD PROTECTED | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ24N
This table gives cross-reference parts and alternative options found for IRFZ24N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ71 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRFZ24N vs BUZ71 |
| HUF75307P3 | Intersil Corporation | Check for Price | 15A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRFZ24N vs HUF75307P3 |
| BUZ71 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRFZ24N vs BUZ71 |
| BUZ71 | Siemens | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRFZ24N vs BUZ71 |
| MTP15N05E | Motorola Mobility LLC | Check for Price | 15A, 50V, 7.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRFZ24N vs MTP15N05E |
| BUZ71 | Intersil Corporation | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRFZ24N vs BUZ71 |
| MTP15N05E | Texas Instruments | Check for Price | 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRFZ24N vs MTP15N05E |
| IRFZ24N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRFZ24N vs IRFZ24N |
| 934055537127 | NXP Semiconductors | Check for Price | TRANSISTOR 17 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | IRFZ24N vs 934055537127 |
| STP20NE06 | STMicroelectronics | Check for Price | 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRFZ24N vs STP20NE06 |