Part Details for IRFZ24 by Vishay Siliconix
Results Overview of IRFZ24 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFZ24 Information
IRFZ24 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFZ24
IRFZ24 CAD Models
IRFZ24 Part Data Attributes
|
|
IRFZ24
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
IRFZ24
Vishay Siliconix
TRANSISTOR 17 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ24
This table gives cross-reference parts and alternative options found for IRFZ24. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFZ24PBF | Vishay Intertechnologies | $0.8464 | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | IRFZ24 vs IRFZ24PBF |
| IRFZ24FPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRFZ24 vs IRFZ24FPBF |
IRFZ24 Frequently Asked Questions (FAQ)
-
The maximum safe operating area (SOA) for the IRFZ24 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
-
The junction-to-case thermal resistance (RθJC) for the IRFZ24 is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. For example, RθJC can be calculated as RθJC = RθJA - RθCS, where RθJA is the junction-to-ambient thermal resistance and RθCS is the case-to-sink thermal resistance.
-
The recommended gate drive voltage for the IRFZ24 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating (VGS) of ±20V to prevent damage to the device.
-
Yes, the IRFZ24 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the operating frequency is within the device's recommended range. Additionally, proper PCB layout, decoupling, and gate drive design are crucial to minimize ringing and ensure reliable operation.
-
The IRFZ24 has an integrated body diode that can conduct during the switching transition. To handle this, you can use a snubber circuit or a diode in parallel with the MOSFET to reduce the voltage spike and ringing during turn-off. Additionally, ensuring a proper gate drive design and minimizing the dead time between switching transitions can help reduce the impact of the body diode.