Part Details for IRFU420 by Vishay Intertechnologies
Results Overview of IRFU420 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFU420 Information
IRFU420 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFU420
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFU420
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Avnet Americas | MOSFET N-CHANNEL 500V - Bulk (Alt: IRFU420) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for IRFU420
IRFU420 CAD Models
IRFU420 Part Data Attributes
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IRFU420
Vishay Intertechnologies
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Datasheet
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IRFU420
Vishay Intertechnologies
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-251AA | |
| Package Description | IPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2.4 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU420
This table gives cross-reference parts and alternative options found for IRFU420. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU420, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFU420PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE PACKAGE-3 | IRFU420 vs IRFU420PBF |
IRFU420 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the IRFU420 is not explicitly stated in the datasheet, but it can be determined by consulting Vishay's application note AN-936, which provides guidelines for calculating the SOA of power MOSFETs. The SOA is typically limited by the device's voltage and current ratings, as well as its thermal characteristics.
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To ensure proper thermal management of the IRFU420, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal grease or a thermal pad, and ensuring that the heat sink is properly attached to the device. The PCB should also be designed to provide a low thermal impedance path to the heat sink. Additionally, the device's thermal characteristics, such as its junction-to-case thermal resistance (RθJC), should be considered when designing the thermal management system.
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The recommended gate drive voltage for the IRFU420 is typically between 10V and 15V, depending on the specific application and the desired level of performance. However, the datasheet recommends a minimum gate drive voltage of 6V to ensure proper turn-on of the device. It is also important to ensure that the gate drive voltage is within the device's absolute maximum rating of 20V to prevent damage.
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To prevent shoot-through in a half-bridge configuration using the IRFU420, it is essential to ensure that the gate drive signals are properly synchronized and that the dead time between the turn-off of one device and the turn-on of the other is sufficient. The dead time should be greater than the sum of the turn-off delay time and the turn-on delay time of the devices. Additionally, the gate drive voltage and current should be sufficient to ensure that the devices turn on and off quickly and efficiently.
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The maximum allowed dv/dt for the IRFU420 is not explicitly stated in the datasheet, but it is typically limited by the device's internal gate resistance and the external gate drive circuitry. A general rule of thumb is to limit the dv/dt to less than 10V/ns to prevent voltage overshoot and ringing. However, the actual dv/dt limit may be higher or lower depending on the specific application and the device's operating conditions.