Part Details for IRFU13N20DPBF by Infineon Technologies AG
Results Overview of IRFU13N20DPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFU13N20DPBF Information
IRFU13N20DPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFU13N20DPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70018362
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RS | IRFU13N20DPBF N-channel MOSFET Module, 13 A, 200 V, 3-Pin IPAK Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.7100 / $0.8900 | RFQ |
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DISTI #
IRFU13N20DPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 14A, 110W, IPAK Min Qty: 1 | 0 |
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$0.6100 / $0.8400 | RFQ |
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DISTI #
SP001573640
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EBV Elektronik | Trans MOSFET NCH 200V 13A 3Pin3Tab IPAK (Alt: SP001573640) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for IRFU13N20DPBF
IRFU13N20DPBF CAD Models
IRFU13N20DPBF Part Data Attributes
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IRFU13N20DPBF
Infineon Technologies AG
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Datasheet
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IRFU13N20DPBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.235 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFU13N20DPBF
This table gives cross-reference parts and alternative options found for IRFU13N20DPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU13N20DPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFU13N20D | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 | IRFU13N20DPBF vs IRFU13N20D |
IRFU13N20DPBF Frequently Asked Questions (FAQ)
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The maximum junction temperature for the IRFU13N20DPBF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
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To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 130W for the IRFU13N20DPBF.
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The recommended gate drive voltage for the IRFU13N20DPBF is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V, but this may affect the device's reliability and lifespan.
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Yes, the IRFU13N20DPBF is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching characteristics and losses should be carefully evaluated to ensure reliable operation and minimize power losses.
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To protect the IRFU13N20DPBF from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit design. Additionally, consider using overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.