Part Details for IRFS7734PBF by Infineon Technologies AG
Results Overview of IRFS7734PBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFS7734PBF Information
IRFS7734PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS7734PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFS7734PBF-ND
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DigiKey | MOSFET N-CH 75V 183A D2PAK Lead time: 52 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70425756
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RS | IRFS7734PBF N-channel MOSFET Transistor, 183 A, 75 V, 3-Pin D2PAK Min Qty: 800 Package Multiple: 1 Container: Bulk | 0 |
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$2.1800 / $2.7300 | RFQ |
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DISTI #
SP001557528
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EBV Elektronik | Trans MOSFET NCH 75V 183A 3Pin D2PAK Tube (Alt: SP001557528) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRFS7734PBF
IRFS7734PBF CAD Models
IRFS7734PBF Part Data Attributes
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IRFS7734PBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFS7734PBF
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 183 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 500 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 290 W | |
| Pulsed Drain Current-Max (IDM) | 650 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRFS7734PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFS7734PBF is -55°C to 150°C.
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No, the IRFS7734PBF is not a radiation-hardened device. It is not designed for use in high-radiation environments.
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Yes, the IRFS7734PBF is qualified for automotive applications and meets the requirements of the AEC-Q101 standard.
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The maximum power dissipation for the IRFS7734PBF is 78W at a case temperature of 25°C.
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Yes, the IRFS7734PBF is a RoHS-compliant device, meaning it meets the requirements of the European Union's Restriction of Hazardous Substances directive.